High Photoactive Black Phase Stability of Cspbi3 Nanocrystals under Damp-Heat Conditions of 85°C and 85% Relative Humidity

Shengwen Zou,Jun Kang,Yuzheng Zhang,Mingjing Qi,Xiaojun Yan,Xiaoliang Zhang,Jianmei Huang
DOI: https://doi.org/10.2139/ssrn.4263639
2022-01-01
SSRN Electronic Journal
Abstract:CsPbI3 as a newly emerging semiconductor material has displayed tremendous prospects for optoelectronic applications. However, the poor photoactive black phase stability limits its further application. In this work, we introduce transition metal nickel ion (Ni2+) as B-site substitution into CsPbI3 nanocrystals (NCs) to stabilize their black phase. The optimized CsPbI3 NCs film presents a record photoactive balck phase stability time of 54 hours under the conditions of 85 ℃ and 85% relative humidity, over 108 times comparing with the undoped one. Furthermore, the Ni2+ doped CsPbI3 NCs solutions maintain bright red emission after vigorously stirring with equal volume of water for 200 hours (the undoped one almost completely quenched), and also show bright red emission after being storing in the air for 200 days (the undoped one completely quenched within 43 days), respectively. Meanwhile, the photoluminescence quantum yield increased from 31.48% of undoped CsPbI3 NCs to 87.69% of doped Ni-3.65% CsPbI3 NCs. Theoretical calculation revealed that these outstanding stabilities and excellent optical properties are closely related to the increased defect formation energy after rational Ni doping. Our work provides a guidance to the synthesis of phase-stabilized CsPbI3 NCs and an insight into the effect of B-site doping in perovskite lattice, making a promising pathway to construct stable and efficient photoelectronic devices.
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