Abstract:<math> β</math>-Gallium oxide (<math> β - G a 2 O 3</math>) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk <math> β - G a 2 O 3</math>. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

Electron Mobility and Mode Analysis of Scattering for Β-Ga2o3 from First Principles

Electron mobility and mode analysis of scattering for -Ga<sub>2</sub>O<sub>3</sub>from first principles

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Anisotropic Anharmonicity Dictates the Thermal Conductivity of Gallium Oxide ($β-Ga_2O_3$)

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Transport Properties and Finite Size Effects in $β$-Ga$_2$O$_3$ Thin Films

The calculated electronic and optical properties of β-Ga2O3 based on the first principles

Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3

Resistive and ballistic phonon transport in $β$-Ga$_2$O$_3$

Free Electron Dynamics and Intrinsic Mobility in Ga2O3 Revealed by Transient Terahertz Conductivity

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Anomalous Temperature-Dependent Phonon Anharmonicity and Strain Engineering of Thermal Conductivity in Β-Ga2o3

Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Ab-Initio Investigation of Anisotropic Optical Properties of Mgb2

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Isotopic study of Raman active phonon modes in $β$-Ga$_{2}$O$_{3}$

Role of phonon scattering and bonding in resolving lattice thermal conductivity ambiguities of β-Ga2O3

First-principles Study on the Anisotropic Transport of Electrons and Phonons in Monolayer and Bulk GaTe: a Comparative Study.

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Dissimilar thermal transport properties in κ - Ga 2O3 and β - Ga 2O3 revealed by homogeneous nonequilibrium molecular dynamics simulations using machine-learned potentials