Abstract:Indium sulfide thin films were prepared by chemical bath deposition method on glass substrates for about 40 min as deposition time and 60 °C as deposition temperature. The films were post-annealed at different temperatures such as 100 °C, 200 °C, 300 °C and 400 °C, for about 1 h. Structural and optical properties of In2S3 thin films after post-annealing process have been investigated. The crystallinity and nanostructures of the films were studied by using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy analysis. Optical reflectance and transmittance of layers were measured in the wavelength of 300–1100 nm by spectrophotometer instrument. Kramers–Kronig relations were used to calculate the optical constants. The X-ray diffraction measurements showed transformation of an amorphous nature to a crystalline structure by increasing the annealing temperature. The atomic force microscopy images showed by increasing the annealing temperature, the roughness of the thin films increased. The scanning electron microscopy images revealed that growth rate increased consistently with the increase in annealing temperature and well-dispersed quasi-spherical nanoparticles with high agglomeration rate are formed at 400 °C. The energy-dispersive X-ray spectroscopy results show reduction in the S/In ratio from 1.61 to 1.49 when annealing temperature increased. Optical results showed the highest optical band gap of 3.65 eV was achieved at the highest annealing temperature (400 °C).

Effect of Ar-plasma Treatment and Annealing on Thermally Evaporated -In2s3 Thin Films

Annealing and Plasma Treatment Effect on Structural, Morphological and Topographical Properties of Evaporated Β-In2s3 Films

Effect of Annealing on the Physical Properties of Thermally Evaporated In2S3 Thin Films

Annealing Effect on the Physical Properties of Evaporated In2S3 Films

Influence of post-annealing in sulfur atmosphere on thermally evaporated β-In2S3 films

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Optical Properties of Thermally Evaporated in 2 S 3 Thin Films Measured Using Photoacoustic Spectroscopy

Effect of Heat Treatment in Sulfur on Structural, Optical and Electrical Properties of Thermally Evaporated In2S3 Thin Films

Effect of Substrate Temperature on Structural and Optical Properties of In2S3 Thin Films Grown by Thermal Evaporation

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Structural and Optical Properties of In2s3 Nano Layers Grown by Close Spaced Evaporation

Effect of annealing on structural and optical properties of indium sulfide thin layers produced by chemical bath deposition method

Conversion of Evaporated In2S3 Layers into In2O3 by Air Annealing

PHOTOTHERMAL DEFLECTION ANALYSIS OF [math]-In2S3 THIN FILMS: THE EFFECT OF S/In MOLAR RATIOS

EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Effects of Annealing on Structural and Electrical Properties of CuInSe 2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes

Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

Effect of different dopants on the structural and physical properties of In2S3 thin films: a review

Effect of Post-Deposition Annealing on the Structural Evolution and Optoelectronic Properties of In2O3:H Thin Films.

New fabrication method for di-indium tri-sulfuric (In2S3) thin films

Characterization of Thermally Evaporated In2S3 Films for Solar Cell Application