Poly(ether Imide) Sandwiched by Ultrathin Hafnium Oxide Films for High-temperature Capacitive Applications

Sang Cheng,Shixun Hu,Qi Li,Jinliang He
DOI: https://doi.org/10.1109/ichve53725.2022.10014495
2022-01-01
Abstract:Polymer film capacitors play an important role in advanced electrical and electronic devices. Recently, many industrials require capacitors operating at the temperature as high as $\mathbf{200~^{\circ} {C}}$ , while polymer dielectric materials suffer from significantly increased conduction loss under elevated temperatures. To address this issue, we deposited ultrathin wide-bandgap $\mathbf{HfO}_{2}$ films onto both sides of Poly(ether imide) (PEI) substrate using atomic layer deposition (ALD) and investigated the leakage current, breakdown strength and energy storage performance of $\mathbf{HfO}_{2}/\mathbf{PRI}/\mathbf{HfO}_{2}$ composites at $\mathbf{200~^{\circ} \mathrm{C}}$ . Experiment results show that a dense and uniform layer of amorphous $\mathbf{HfO}_{2}$ forms on the surface of PEI. The resultant composites exhibit reduced leakage current, enhanced breakdown strength, enhanced charge-discharge efficiency and discharged energy density compared with neat PEI. Moreover, thicker $\mathbf{HfO}_{2}$ coating layers are more effective in suppressing the conduction loss at elevated temperatures.
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