Abstract:Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nano-beam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a strain-tuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ~10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties.

Single-photon Emitters in Two-Dimensional Hexagonal Boron Nitride: Properties, Preparations, and Applications

Engineering of Single-Photon Emitters in Hexagonal Boron Nitride [Invited]

Microstructure Engineering of Hexagonal Boron Nitride for Single‐Photon Emitter Applications

Research Progress of Single-Photon Emitters Based on Two-Dimensional Materials

Transferable Room-Temperature Single-Photon Emitters in Hexagonal Boron Nitride Grown by Molecular Beam Epitaxy

Low-Dimensional Solid-State Single-Photon Emitters

Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates

Selective Defect Formation in Hexagonal Boron Nitride

Organic Molecules as Origin of Visible-Range Single Photon Emission from Hexagonal Boron Nitride and Mica

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride.

Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Photochromism in a Hexagonal Boron Nitride Single Photon Emitter

Deterministic formation of carbon-functionalized quantum emitters in hexagonal boron nitride

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization

Characteristics of quantum emitters in hexagonal boron nitride suitable for integration with nanophotonic platforms

Nanoscale axial position and orientation measurement of hexagonal boron nitride quantum emitters using a tunable nanophotonic environment

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride