Abstract:One of the key challenges for spintronic and novel quantum technologies is to achieve active control of the spin angular momentum of electrons in nanoscale materials on ultrafast, femtosecond timescales. While conventional ferromagnetic materials and materials supporting spin texture suffer both from conceptional limitations in miniaturization and in efficiency of optical and electronic manipulation, non-magnetic centrosymmetric layered materials with hidden spin polarization may offer an alternative pathway to manipulate the spin degree of freedom by external stimuli. Here we demonstrate a novel approach to generate transient spin polarization on a femtosecond timescale in the otherwise spin-unpolarized band structure of the centrosymmetric 2H-stacked group VI transition metal dichalcogenide WSe$_{2}$. Using ultrafast optical excitation of a fullerene layer grown on top of WSe$_{2}$, we trigger an ultrafast interlayer electron transfer from the fullerene layer into the WSe$_{2}$ crystal. The resulting transient charging of the C$_{60}$/WSe$_{2}$ interface leads to a substantial interfacial electric field that by means of spin-layer-valley locking ultimately creates ultrafast spin polarization without the need of an external magnetic field. Our findings hence open a novel pathway for optically engineering spin functionalities such as the sub-picosecond generation and manipulation of ultrafast spin currents in 2D heterostructures.

Unlocking Hidden Spins in Centrosymmetric 1T Transition Metal Dichalcogenides by Vacancy-Controlled Spin-Orbit Scattering

Unlocking Hidden Spins in Centrosymmetric SnSe2 by Vacancy-Controlled Spin-Orbit Scattering

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Hidden spin polarization in inversion-symmetric bulk crystals

Revealing Hidden Spin Polarization in Centrosymmetric van der Waals Materials on Ultrafast Timescales

Hidden Zeeman-type spin polarization in bulk crystals

Even Integer Quantum Hall Effect in Materials with Hidden Spin Texture

Ubiquitous Spin-Orbit Coupling in a Screw Dislocation with High Spin Coherency.

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Ubiquitous Ideal Spin-Orbit Coupling in a Screw Dislocation in Semiconductors

Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe 2 film.

Unidirectional Spin-Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices

Hidden spin polarization in the centrosymmetric Mo S 2 crystal revealed via elliptically polarized terahertz emission

Circular Photocurrents in Centrosymmetric Semiconductors with Hidden Spin Polarization

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$

Symmetry-assisted protection and compensation of hidden spin polarization in centrosymmetric systems

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Multiple Zeeman-type Hidden Spin Splitting in $\mathcal{\hat{P}\hat{T}}$-Symmetric Layered Antiferromagnets