First-Principles Study on Electronic and Optical Properties of Sn-Doped Topological Insulator Bi2se3

Shuang Zheng,Zhiqiang Li,Tengfei Lu,Jiajun Wang,Yaru Wang,Yan Cui,Zhihua Zhang,Ming He,Bo Song

DOI: https://doi.org/10.1016/j.comptc.2023.114170

IF: 2.292

2023-01-01

Computational and Theoretical Chemistry

Abstract:Electronic structures and optical properties of pure and sn-doped Bi2Se3 were investigated by first-principles calculations based on density functional theory (DFT). For Bi2-xSnxSe3 (x = 0, 0.083, 0.167, 0.25), the intro-duction of Sn induced impurity bands near the Fermi level. Sn@(0,3) configuration with longer sn-Sn distance was more stable for the smallest formation energy. From the charge density result, sn-doped Bi2Se3 was the material with covalent and ionic characteristic. There was obvious blue shifting in the dielectric function and ultraviolet absorption edges for sn-doped Bi2Se3. The results had implications for the fabrication of sn-doped Bi2Se3 optical devices that can be blue-shifted in ultraviolet (UV) region.