Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation
Yong Zhang,Jian Shen,Lei Zhang,Jingchi Li,Chenglong Feng,Yongheng Jiang,Hongwei Wang,Xingfeng Li,Yu He,Xingchen Ji,Yonghui Tian,Xi Xiao,Haoshuo Chen,Nicolas K. Fontaine,Guanghui Ren,Arnan Mitchell,Yikai Su
DOI: https://doi.org/10.21203/rs.3.rs-3394909/v1
2023-01-01
Abstract:Abstract High-speed electro-optic modulators are key components in modern communication networks and various applications that require chip-scale modulation with large bandwidth, high modulation efficiency, and compact footprint. However, fundamental trade-offs make it challenging to achieve these metrics simultaneously, and thus new methodologies must be explored. To this end, we present the first demonstration of a Mach-Zehnder modulator harnessing topological slow-light waveguides and capacitively loaded slow-wave electrodes on silicon-nitride-loaded lithium niobate on an insulator platform. Owing to the slow-light effect in the one-dimensional topological waveguide, the increased light-matter interaction time and group index significantly improve the modulation efficiency. With the 1-mm-length modulation section, a record low half-wave voltage length product V π ∙L of 0.21 V∙cm is obtained, which is one order of magnitude smaller than that of conventional thin film lithium niobate Mach-Zehnder modulators. Slow-wave electrodes are employed for electro-optic velocity and impedance matching, enabling an unprecedented bandwidth of 110 GHz without roll-off. The achieved bandwidth-efficiency ratio of 524 GHz/V/cm is among the highest reported for all-dielectric and semiconductor modulators. Four- and eight-level pulse amplitude modulation signals of up to 240 and 300 Gbps, respectively, have been generated using the topological modulator. Our topological modulator provides ultra-large bandwidth, ultra-high efficiency, and a compact solution for next-generation electro-optic systems.