Abstract:Cubic Cs2SnI6 perovskite is considered to be an ideal lead-free and air-stable alternative to traditional APbX(3) [A = Cs, K, CH3NH3, CH(NH2)(2)] perovskites for optoelectronic applications, such as solar cells and photodetectors. Herein, both experiments and theoretical calculations are carried out to study the lattice dynamics and temperature dependences of band gaps. Using Raman spectroscopy, we show that the obtained Cs2SnI6 film maintains a long-range crystalline structure of the cubic phase within 77-300 K, which is further confirmed via lattice dynamics calculations based on density functional theory (DFT). An ultrasmall net blueshift of 0.035 eV deduced from its temperature-dependent photoluminescence (PL) spectrum is observed as the temperature increases from 103 to 300 K, making it an ideal material for optoelectronic devices. Notably, this blueshift of the Cs2SnI6 film is significantly smaller than that of the DFT-calculated band-gap shift (similar to 0.085 eV) based on thermal expansion theory. This deviation is attributed to the strong phonon-electron (ph-e) interaction inherently occurring in Cs2SnI6 material, which counterbalances the thermal expansion effects. We further evaluate the magnitude of the ph-e interaction by fitting the full width at half maximum (FWHM) of the PL spectrum. The fitted Huang-Rhys factor (S) of 4.9 is consistent with reduced electronic dimensionality and increased vibrational degree of freedom, indicating stronger ph-e coupling strength in the Cs2SnI6 film compared with regular APbX(3)-type perovskites (S < 3.3). Adopting both thermal expansion and ph-e coupling effects, the ultrasmall band-gap shift is theoretically calculated and is in good agreement with the experimental blueshift of the band gap. In summary, our work illustrates the solid structural stability of Cs2SnI6 in both lattice and electronic structures, paving the way for the next generation of optoelectronic devices.

Indirect Bandgap Emission of the Metal Halide Perovskite FAPbI3 at Low Temperatures.

Indirect Bandgap Emission of the Metal Halide Perovskite FAPbI 3 at Low Temperatures

Excitonic Properties of Low-Band-Gap Lead–Tin Halide Perovskites

Unraveling exciton–phonon coupling in individual FAPbI3 nanocrystals emitting near-infrared single photons

Real-time observation of the buildup of polaron in α-FAPbI 3

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskite thin films

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Real-time Observation of the Buildup of Polaron in Α-Fapbi3

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskites

Revealing Unusual Bandgap Shifts with Temperature and Bandgap Renormalization Effect in Phase‐Stabilized Metal Halide Perovskite Thin Films

Evolved Photovoltaic Performance of MAPbI3 and FAPbI3-based Perovskite Solar Cells in Low-Temperatures

Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Field-induced Spin Splitting and Anomalous Photoluminescence Circular Polarization in CH3NH3PbI3 Films at High Magnetic Field

Direct and Indirect Exciton Transitions in Two-Dimensional Lead Halide Perovskite Semiconductors

Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect

Evolved Photovoltaic Performance of MAPbI3 3 and FAPbI3-based 3-Based Perovskite Solar Cells in Low- Temperatures

Temperature-dependent Photoluminescence Spectra and Decay Dynamics of MAPbBr3 and MAPbI3 Thin Films

Perovskite Single Crystals and Thin Films for Optoelectronic Devices (conference Presentation)

Nonmonotonic Temperature-Dependent Bandgap Change of CsPbCl3 Films Induced by Optical Phonon Scattering

Temperature-Dependent Photoluminescence of Co-Evaporated MAPbI3 Ultrathin Films

Temperature-dependence of the band gap in all-inorganic perovskite CsPbI 3 from room to high temperatures