Challenges remain for 2D semiconductor growth

Lu Shi
DOI: https://doi.org/10.1038/s41565-024-01610-8
IF: 38.3
2024-02-08
Nature Nanotechnology
Abstract:The primary hurdle in commercializing these materials is the difficulty in producing their large wafer-scale forms, which may not necessarily be single crystalline. Researchers have the flexibility to choose a fabrication process for TMDs, whether single-crystalline or polycrystalline, based on the needs of the application and cost factors. Significant advancements have been achieved recently using chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD) techniques. For instance, 12-inch polycrystalline monolayer MoS 2 by CVD (Y. Xia et al., Nat. Mater . 22 , 1324–1331; 2023) and low-temperature growth of 8-inch monolayer MoS 2 by MOCVD for back-end of line (BEOL) integration (J. Zhu et al., Nat. Nanotechnol . 18 , 456–463; 2023) have been realized in 2023. When asked about the most promising technique, Wang feels that both techniques hold industrial potential. The CVD method currently has higher materials quality, but MOCVD catches up quickly and has advantages in wafer-scale uniformity and repeatability. "We recently developed a halide vapor phase epitaxy method for TMD epitaxy, which is widely used in the III–V semiconductors industry and may bring a universal way to realize wafer-scale epitaxy of single-crystal TMDs," says Wang (T. Li et al., Natl Sci. Open 2 , 20220055; 2023).
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?