Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
Fang-Qi Lin,Nong Li,Wen-Guang Zhou,Jun-Kai Jiang,Fa-Ran Chang,Yong Li,Su-Ning Cui,Wei-Qiang Chen,Dong-Wei Jiang,Hong-Yue Hao,Guo-Wei Wang,Ying-Qiang Xu,Zhi-Chuan Niu
DOI: https://doi.org/10.1088/1674-1056/ac615d
2022-03-28
Chinese Physics B
Abstract:Abstract In this work, by optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared range is achieved by molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectrometer were used to characterize the material growth quality. The results show that the full width at half maximum (FWHM) of the superlattice zero-order diffraction peak, the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks, and the surface roughness get the best results when the BEP ratio reach the optimal value, which are 28 arcsec, 13 arcsec and 1.63 Å, respectively. The intensity of the zero-order diffraction peak is strongest at the optimal value. The relative spectral response of the LWIR detector shows that it exhibits a 100% cut-off wavelength of 12.6 μm at 77 K. High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.
physics, multidisciplinary