Dual H2O2 production paths over chemically etched MoS2/FeS2 heterojunction: Maximizing self-sufficient heterogeneous Fenton reaction rate under the neutral condition

Yang Yang,Haochen Yu,Maoquan Wu,Tingting Zhao,Yina Guan,Dong Yang,Yufeng Zhu,Yanqiu Zhang,Shouchun Ma,Jie Wu,Li Liu,Tongjie Yao
DOI: https://doi.org/10.1016/j.apcatb.2022.122307
2023-05-01
Abstract:Sufficient generation of H2O2 played an essential role in boosting self-sufficient heterogeneous Fenton reaction. Herein, the dual H2O2 production paths were designed to maximize the yield over H2O2-etched MoS2/FeS2 Z-scheme heterojunction, whose surface was modified with abundant –OH groups and sulfur vacancies (SVs). Mechanism studies revealed that H2O2 was generated via two-step single-electron reduction by electrons on conduction band, where H2O2 production was significantly improved by the internal hole-scavenging effect from –OH groups. Additionally, electrons surrounding SVs served as another sites for H2O2 production via one-step two-electron reduction even in darkness. H2O2 yield in neutral aqueous solution reached 1.5 mM/g/h without external hole scavenger. Tetracycline and rhodamine B were effectively degraded under light or in darkness. The degradation performance was even comparable to the heterogeneous Fenton reaction. This work provides new insights for the design of self-sufficient heterogeneous Fenton system with exceptional degradation performance.
chemistry, physical,engineering, chemical, environmental
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