Near IR Bandgap Semiconducting 2D Conjugated Metal‐Organic Framework with Rhombic Lattice and High Mobility

Lukas Sporrer,Guojun Zhou,Mingchao Wang,Vasileios Balos,Sergio Revuelta,Kamil Jastrzembski,Markus Loeffler,Petko Petkov,Thomas Heine,Angieszka Kuc,Enrique Canovas,Zhehao Huang,Xinliang Feng,Renhao Dong
DOI: https://doi.org/10.1002/anie.202300186
2023-01-01
Abstract:Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emergingas a unique class of 2D electronic materials. However, intrinsicallysemiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carriermobility have been rare. Most of the reported semiconducting 2D c-MOFs aremetallic (i.e. gapless), which limits their use in applications where largerband gaps are needed for logic devices. Herein, we design a new D2h-geometricligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP),and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with arhombohedral pore geometry after coordination with copper. The continuousrotation electron diffraction (cRED) analysis unveils the orthorhombic crystalstructure at the atomic level with a unique AB layer stacking. The resultantCu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eVand exhibits high electrical conductivity of 0.10 S cm-1 and high chargecarrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculationsunderline the predominant role of the out-of-plane charge transport in thissemiquinone-based 2D c-MOFs.
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