Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

Wan CJ,Zhu LQ,Wan X,Shi Y,Wan Q

IF: 4

2017-01-01

Applied Physics Letters

Abstract:The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphi

What problem does this paper attempt to address?

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Fan Xia,Tian Xia,Li Xiang,Sujuan Ding,Shuo Li,Yucheng Yin,Meiqi Xi,Chuanhong Jin,Xuelei Liang,Youfan Hu

DOI: https://doi.org/10.1021/acsami.2c07825

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 degrees C to grow ferroelectric dielectrics in which the single-pulse, pairedpulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000x, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.
Artificial Synapses Based on In-Plane Gate Organic Electrochemical Transistors.

Chuan Qian,Jia Sun,Ling-an Kong,Guangyang Gou,Junliang Yang,Jun He,Yongli Gao,Qing Wan

DOI: https://doi.org/10.1021/acsami.6b08866

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:Realization of biological synapses using electronic devices is regarded as the basic building blocks for neuromorphic engineering and artificial neural network. With the advantages of biocompatibility, low cost, flexibility, and compatible with printing and roll-to-roll processes, the artificial synapse based on organic transistor is of great interest. In this paper, the artificial synapse simulation by ion-gel gated organic field-effect transistors (FETs) with poly(3-hexylthiophene) (P3HT) active channel is demonstrated. Key features of the synaptic behaviors, such as paired-pulse facilitation (PPF), short-term plasticity (STP), self-tuning, the spike logic operation, spatiotemporal dentritic integration, and modulation are successfully mimicked. Furthermore, the interface doping processes of electrolyte ions between the active P3HT layer and ion gels is comprehensively studied for confirming the operating processes underlying the conductivity and excitatory postsynaptic current (EPSC) variations in the organic synaptic devices. This study represents an important step toward building future artificial neuromorphic systems with newly emerged ion gel gated organic synaptic devices.
Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

Chang Jin Wan,Li Qiang Zhu,Ju Mei Zhou,Yi Shi,Qing Wan

DOI: https://doi.org/10.1039/c3nr05882d

IF: 6.7

2014-01-01

Nanoscale

Abstract:Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.
Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications

Fu-Chiao Wu,Chun-Yu Chen,Yu-Wu Wang,Chun-Bin You,Li-Yun Wang,Jrjeng Ruan,Wei-Yang Chou,Wei-Chih Lai,Horng-Long Cheng

DOI: https://doi.org/10.1021/acsami.4c05966

2024-08-07

Abstract:Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.
Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Lei Yin,Wen Huang,Rulei Xiao,Wenbing Peng,Yiyue Zhu,Yiqiang Zhang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/acs.nanolett.0c00298

IF: 10.8

2020-01-01

Nano Letters

Abstract:Optoelectronic synaptic devices have been attracting increasing attention due to their critical role in the development of neuromorphic computing based on optoelectronic integration. Here we start with silicon nanomembrane (Si NM) to fabricate optoelectronic synaptic devices. Organolead halide perovskite (MAPbI3) is exploited to form a hybrid structure with Si NM. We demonstrate that synaptic transistors based on the hybrid structure are very sensitive to optical stimulation with low energy consumption. Synaptic functionalities such as excitatory post-synaptic current (EPSC), paired-pulse facilitation, and transition from short-term memory to long-term memory (LTM) are all successfully mimicked by using these optically stimulated synaptic transistors. The backgate-enabled tunability of the EPSC of these devices further leads to the LTM-based mimicking of visual learning and memory processes under different mood states. This work contributes to the development of Si-based optoelectronic synaptic devices for neuromorphic computing.
A covalent organic polymer-based transistor with multifunctional memory and synaptic functions

Zihao Feng,Ahmed Elewa,Islam Mekhemer,Wenbiao Niu,Xin-Qi Ma,Ziqi Jia,Ji-Yu Zhao,Su-Ting Han,Ho-Hsiu Chou,Ye Zhou

DOI: https://doi.org/10.1039/d3tc03026a

IF: 6.4

2023-12-23

Journal of Materials Chemistry C

Abstract:Inspired by biological systems that are highly connected and can process massive amounts of data, neuromorphic transistors may overcome the traditional von Neumann bottleneck. In this work, an organic synaptic transistor was fabricated with a covalent organic polymer MT-TP to mimic the behavior of biological synapses. The device exhibits hole trapping/detrapping ability and outstanding stability. The common biological synaptic behaviors were successfully simulated by the MT-TP synaptic transistor. Eventually, an artificial neural network was constructed and the total accuracy for identifying numbers could reach 86.2%. The results demonstrate that the MT-TP based organic synaptic transistor is a good candidate for future computing systems.

materials science, multidisciplinary,physics, applied
Artificial Synapses Based on Organic Electrochemical Transistors with Self-Healing Dielectric Layers

Yushan Gao,Junyao Zhang,Dapeng Liu,Tongrui Sun,Jun Wang,Li,Shilei Dai,Jianhua Zhang,Zhenglong Yang,Jia Huang

DOI: https://doi.org/10.1016/j.cclet.2023.108582

IF: 9.1

2024-01-01

Chinese Chemical Letters

Abstract:Organic electrochemical transistors (OECTs) have emerged as one type of promising building block for neuromorphic systems owing to their capability of mimicking the morphology and functions of biological neurons and synapses. Currently, numerous kinds of OECTs have been developed, while self-healing performance has been neglected in most reported OECTs. In this work, the OECTs using self-healing polymer electrolytes as dielectric layers are proposed. Several important synaptic behaviors are simulated in the OECTs by doping the channel layers with ions from the electrolytes. Benefitting from the dynamic hydrogen bonds in the self-healing polymer electrolytes, the OECTs can successfully maintain their electrical performance and the ability of emulating synaptic behaviors after self-healing compared with the initial state. More significantly, the sublinear spatial summation function is demonstrated in the OECTs and their potential in flexible electronics is also validated. These results suggest that our devices are expected to be a vital component in the development of future wearable and bioimplantable neuromorphic systems.
Organic synaptic devices based on ionic gel with reduced leakage current

Dapeng Liu,Yiwei Zhao,Qianqian Shi,Shilei Dai,Li Tian,Lize Xiong,Jia Huang

DOI: https://doi.org/10.1039/d0cc07488h

2021-01-01

Abstract:In this work, we presented a solid-state hybrid electrolyte dielectric film fabricated by a facile solution process, composed of ionic liquid and high-k polymers for leakage current reduction. With ions involved in the dielectric, the organic transistor can be operated under low voltage, and some essential synaptic behaviors were successfully simulated by the electrostatic coupling effect for building neuromorphic computing systems.
Organic-Inorganic Hybrid Synaptic Transistors: Methyl-Silsesquioxanes-Based Electric Double Layer for Enhanced Synaptic Functionality and CMOS Compatibility

Tae-Gyu Hwang,Hamin Park,Won-Ju Cho

DOI: https://doi.org/10.3390/biomimetics9030157

2024-03-03

Abstract:Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. This paper proposes organic-inorganic hybrid synaptic transistors using methyl silsesquioxane (MSQ) as the electrolyte. MSQ, derived from the combination of inorganic silsesquioxanes and the organic methyl (-CH3) group, exhibits exceptional thermal and chemical stability, thus ensuring compatibility with CMOS processes. We fabricated Al/MSQ electrolyte/Pt capacitors, exhibiting a substantial capacitance of 1.89 µF/cm2 at 10 Hz. MSQ-based EDL synaptic transistors demonstrated various synaptic behaviors, such as excitatory post-synaptic current, paired-pulse facilitation, signal pass filtering, and spike-number-dependent plasticity. Additionally, we validated synaptic functions such as information storage and synapse weight adjustment, simulating brain synaptic operations through potentiation and depression. Notably, these synaptic operations demonstrated stability over five continuous operation cycles. Lastly, we trained a multi-layer artificial deep neural network (DNN) using a handwritten Modified National Institute of Standards and Technology image dataset. The DNN achieved an impressive recognition rate of 92.28%. The prepared MSQ-based EDL synaptic transistors, with excellent thermal/chemical stability, synaptic functionality, and compatibility with CMOS processes, harbor tremendous potential as materials for next-generation artificial synapse components.
Realization of Tunable Artificial Synapse Through Ambipolar Charge Trapping in Organic Transistor with Pentacene/poly(α-Methylstyrene) Architecture

Yushan Li,Ruiqiang Tao,Waner He,Cheng Chang,Zhengmiao Zou,Yan Zhang,Dao Wang,Jiali Wang,Zhen Fan,Guofu Zhou,Xubing Lu,Junming Liu

DOI: https://doi.org/10.1063/5.0043016

IF: 2.877

2021-01-01

Journal of Applied Physics

Abstract:Transistor-based artificial synapses are expected to tackle the inherent limitations of traditional von Neumann architecture for neuromorphic computing paradigm. Organic electronic materials are promising components of future neuromorphic systems, but mimicking the functions of biological synapses for symmetric weight update and desired variation margin still remains challenging. Here, we propose a synaptic transistor based on pentacene/poly(α-methylstyrene) (PαMS) architecture capable of exhibiting the main behavior of a biological spiking synapse. The ambipolar charge trapping of the transistor enables symmetric variation of the channel conductivity with desirable margin. Comprehensive synaptic functions, including the postsynaptic current with different pulse amplitudes, short-term to long-term plasticity transition, reversible channel conductance potentiation and depression, and repetitive and symmetrical learning processes, are emulated. The realization of essential synaptic functions based on the cumulative charge trapping of pentacene/PαMS structure provides a feasible device structure toward the future demand of neuromorphic computing.
Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

Changjin Wan,Liqiang Zhu,Yanghui Liu,Ping Feng,Zhaoping Liu,Hailiang Cao,Peng Xiao,Yi Shi,Qing Wan

DOI: https://doi.org/10.48550/arXiv.1510.06115

2015-10-21

Abstract:Neuron is the most important building block in our brain, and information processing in individual neuron involves the transformation of input synaptic spike trains into an appropriate output spike train. Hardware implementation of neuron by individual ionic/electronic hybrid device is of great significance for enhancing our understanding of the brain and solving sensory processing and complex recognition tasks. Here, we provide a proof-of-principle artificial neuron based on a proton conducting graphene oxide (GO) coupled oxide-based electric-double-layer (EDL) transistor with multiple driving inputs and one modulatory input terminal. Paired-pulse facilitation, dendritic integration and orientation tuning were successfully emulated. Additionally, neuronal gain control (arithmetic) in the scheme of rate coding is also experimentally demonstrated. Our results provide a new-concept approach for building brain-inspired cognitive systems.

Neurons and Cognition,Materials Science,Emerging Technologies
Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems Applications

Li Qiang Zhu,Chang Jin Wan,Li Qiang Guo,Yi Shi,Qing Wan

DOI: https://doi.org/10.1038/ncomms4158

2013-11-04

Abstract:The basic units in our brain are neurons and each neuron has more than 1000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform critical computational functions in neural circuits. Therefore the major challenge for the hardware implementation of neuromorphic computation is to develop artificial synapse. Here, in-plane oxide-based artificial synapse network coupled by proton neurotransmitters are self-assembled on glass substrates at room-temperature. A strong lateral modulation is observed due to the proton migration in the nanogranular phosphorus-doped SiO2 electrolyte films. Functional roles of short-term plasticity, including paired-pulse facilitation, dynamic filtering and spatiotemporally correlated signal processing are mimicked. Such in-plane oxide-based protonic/electronic hybrid synapse network proposed here are interesting for building future neuromorphic systems.

Materials Science
Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

Xuemeng Hu,Jialin Meng,Tianyang Feng,Tianyu Wang,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1007/s12274-024-6532-6

IF: 9.9

2024-01-01

Nano Research

Abstract:Traditional computing structures are blocked by the von Neumann bottleneck, and neuromorphic computing devices inspired by the human brain which integrate storage and computation have received more and more attention. Here, a flexible organic device with 2,7-dioctyl[1] benzothieno [3,2-b][1] benzothiophene (C8-BTBT) and 2,9-didecyldinaphtho [2,3-b:2′,3′-f] thieno [3,2-b] thiophene (C10-DNTT) heterostructural channel having excellent synaptic behaviors was fabricated on muscovite (MICA) substrate, which has a memory window greater than 20 V. This device shows better electrical characteristics than organic field effect transistors with single organic semiconductor channel. Furthermore, the device simulates organism synaptic behaviors successfully, such as paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) process, and transition from short-term memory (STM) to long-term memory (LTM) by optical and electrical modulations. Importantly, the neuromorphic computing function was verified using the Modified National Institute of Standards and Technology (MNIST) pattern recognition, with a recognition rate nearly 100
Synaptic devices with sodium alginate ionic gel gating for global regulation

Yifei Liu,Guangdi Feng,Qiuxiang Zhu,Yu Xu,Shenglan Hao,Ke Qu,Bobo Tian,Chungang Duan

DOI: https://doi.org/10.1063/5.0190913

IF: 2.877

2024-01-26

Journal of Applied Physics

Abstract:Information processing and memorizing in the brain take place in a neural network consisting of neurons connected with each other by synapses. Meanwhile, the neural network is immersed in a common electrochemical environment with global parameters regulating the overall functions, which is barely discussed in neuromorphic devices. In this study, organic/inorganic hybrid transistors with sodium alginate as the gate dielectric layer and indium tin oxide as the channel were successfully prepared. We have not only simulated the basic properties of synapses in a single device, but, on top of that, also simulated the global regulation of information processing in the brain due to the incorporation of global grids, achieving excitatory and inhibitory synaptic weight. Moreover, the construction of a 3 × 3 synaptic array enables image learning and memorizing functions. These results demonstrate the significant advantages of electrolyte-gated transistors in enabling complex neural network connectivity and offer a promising opportunity for future artificial synapses.

physics, applied
Oxide-Based Synaptic Transistors for Neuromorphic Systems

Qing Wan

DOI: https://doi.org/10.1149/ma2015-01/21/1367

2015-01-01

ECS Meeting Abstracts

Abstract:Inspired by the energy-efficient and cognitive computational ability of a biological brain, neuromorphic computing is an attractive computation paradigm that complements the von Neumann architecture. Hardware implementations of synapses, dendrites and spiking neural networks represent a promising computational paradigm for solving complex pattern recognition and sensory processing tasks. Here, artificial electronic synapses and dendrites are proposed based on the oxide-based electrical-double-layer transistors. Strong electrostatic coupling effect and electrochemical doping were observed due to proton migration in the P-doped SiO2 electrolyte films. Protons in the P-doped SiO2 electrolyte and oxide channel conductance were regarded as the neurotransmitter and synaptic weight, respectively. Spike-timing dependent plasticity, short-term plasticity, including paired-pulse facilitation, dynamic filtering was mimicked. Most importantly, dendritic arithmetic and spiking pH sensors with extremely low energy dissipation of 0.5pJ are also demonstrated in a simple artificial synapse with multiple pre-synaptic inputs. Our oxide-based protonic/electronic hybrid artificial synaptic transistors are potential building blocks for brain-inspired computers and neuromorphic systems. [1] L. Q. Zhu, C. J. Wan, L. Guo, Y. Shi, and Q. Wan*. Nature Communications, 5, 3158, 2014. [2] C. J. Wan, L. Q. Zhu, J. M. Zhou, Y. Shi, Q. Wan*. Nanoscale. 6, 4491, 2014. [3] C.J. Wan, L. Q. Zhu, Y. H. Liu, Y. Shi, and Q. Wan*. IEEE Electron Device Letters. 35, 672, 2014. [4] L.Q. Guo, Q. Wan*, C. J. Wan, L. Q. Zhu, Y. Shi. IEEE Electron Device Letters. 34,1581, 2013. [5] M.Z. Dai, Q. Wan*. Nano Letters 11, 3987, 2011.
Organic optoelectronic synapse based on photon-modulated electrochemical doping

Ke Chen,Hang Hu,Inho Song,Habtom B. Gobeze,Won-June Lee,Ashkan Abtahi,Kirk S. Schanze,Jianguo Mei

DOI: https://doi.org/10.1038/s41566-023-01232-x

IF: 35

2023-06-23

Nature Photonics

Abstract:Optoelectronic synapses can perceive and memorize visual information, making them appealing for future bionic eyes or vision automation. Organic field-effect transistors are a promising platform for optoelectronic synaptic devices thanks to their flexibility and biocompatibility. However, charge screening effects occurring at channel–dielectric interfaces hinder the implementation of programmable multilevel memories. Here, we report photonic organic synapses based on photon-modulated electrochemical doping in electrochemical transistors, where light can manipulate ion insertion into the photoactive layer composed of donor–acceptor heterojunction interfaces. This enables high-density multilevel conductance modulation at low operating voltages (<1 V) and the imitation of ion flux-driven synaptic activity of living systems. The devices can recognize different optical signals and mimic the learning processes of the human brain. By exploiting the integrated functions of perception, processing and memorization of visual information, a single-layer synapse array acts as an artificial retina enabling facial recognition without the use of a complex artificial neural network.

optics,physics, applied
Hodgkin–Huxley Artificial Synaptic Membrane Based on Protonic/Electronic Hybrid Neuromorphic Transistors

Yang Ming Fu,Chang Jin Wan,Li Qiang Zhu,Hui Xiao,Xiao Dong Chen,Qing Wan

DOI: https://doi.org/10.1002/adbi.201700198

IF: 4.0531

2018-01-01

Advanced Biosystems

Abstract:AbstractIontronics is a newly emerging interdisciplinary concept that bridges electronics and ionics. It provides new opportunities for biomimic information processing. Iontronic devices can act as building blocks for neuromorphic platforms. Here, a proof‐of‐principle Hodgkin–Huxley artificial synaptic membrane is proposed for the first time based on inorganic proton conductor. Phosphosilicate glass‐based proton conductor electrolyte demonstrates unique short‐term volatile charging behaviors, indicating potential short‐term synaptic plasticity applications. By using protonic/electronic hybrid oxide transistor configuration, dynamic synaptic membrane potential responses are triggered with gate current spikes. Typical resting potential, excitatory/inhibitory postsynaptic potential behaviors, and membrane depolarization/activation behaviors are mimicked on the proposed Hodgkin–Huxley artificial synaptic membrane. Moreover, proton‐related electrostatic coupling enables the device to possess short‐term synaptic plasticities with low power consumption. The proposed Hodgkin–Huxley artificial synaptic membrane provides a new prototype for neuromorphic system applications.
Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Changjin Wan,Liqiang Zhu,Yanghui Liu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1109/led.2014.2316545

IF: 4.8157

2014-01-01

IEEE Electron Device Letters

Abstract:Electronic implementation of biological synapses with essential plasticity and computing functions has been paid world-wide attentions. Here, laterally coupled indium-zinc oxide (IZO)-based synaptic transistors gated by solution-processed sodium alginate proton conducting electrolyte films are fabricated at room temperature. Synaptic behaviors and functions, including paired-pulse facilitation, high-pass filtering, and dendritic integration, are experimentally mimicked. Proton lateral migration-induced electric-double-layer electrostatic modulation is of great importance for such emulation. Such IZO-based synaptic transistors provide an interesting approach for synaptic electronics and neuromorphic systems.
Multi-terminal pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor with multi-mode cognitive activities

Yan Li,You Jie Huang,Xin Li Chen,Wei Sheng Wang,Xin Huang,Hui Xiao,Li Qiang Zhu

DOI: https://doi.org/10.1007/s11467-024-1401-z

2024-04-24

Frontiers of Physics

Abstract:In order to fulfill the urgent requirements of functional products, circuit integration of different functional devices are commonly utilized. Thus, issues including production cycle, cost, and circuit crosstalk will get serious. Neuromorphic computing aims to break through the bottle neck of von Neumann architectures. Electronic devices with multi-operation modes, especially neuromorphic devices with multi-mode cognitive activities, would provide interesting solutions. Here, pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor was fabricated. With extremely strong proton related interfacial electric-double-layer coupling, the device can operate at low voltage of below 1 V. The device can also operate at multi-operation mode, including bottom gate mode, coplanar gate and pseudo-diode mode. Interestingly, the artificial synapse can work at low voltage of only 1 mV, exhibiting extremely low energy consumption of ∼7.8 fJ, good signal-to-noise ratio of ∼229.6 and sensitivity of ∼23.6 dB. Both inhibitory and excitatory synaptic responses were mimicked on the pseudo-diode, demonstrating spike rate dependent plasticity activities. Remarkably, a linear classifier is proposed on the oxide neuromorphic transistor under synaptic metaplasticity mechanism. These results suggest great potentials of the oxide neuromorphic devices with multi-mode cognitive activities in neuromorphic platform.

physics, multidisciplinary
Solution-Processed, Electrolyte-Gated In2O3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications.

Yixin Zhu,Guoxia Liu,Zhijie Xin,Chuanyu Fu,Qing Wan,Fukai Shan

DOI: https://doi.org/10.1021/acsami.9b18605

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic transistors fabricated by solution processes have been reported. In this article, the indium oxide synaptic transistors based on polyimide substrates were fabricated by a nontoxic water-inducement method at a low temperature, and lithium perchlorate (LiClO4) was dissolved in polyethylene oxide as the gate electrolyte. For water-inducement process, comparable electrical properties of the synaptic transistors can be achieved by prolonging the annealing time rather than high-temperature annealing with a relatively short time. The effect of the annealing time on the electrical performance of the electrolyte-gated transistors annealed at various temperatures was investigated. It is found that the electrolyte-gated-synaptic transistor on polyimide substrate annealed at 200 °C exhibits high electrical performance and good mechanical stability. Due to the ion migration relaxation dynamics in the polymer electrolyte, various important synaptic behaviors such as the excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, and long-term memory performance were successfully mimicked. The electrolyte-gated synaptic transistors based on solution-processed In2O3 exhibit great potential in neuromorphological applications.

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Artificial Synapses Based on In-Plane Gate Organic Electrochemical Transistors.

Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

A covalent organic polymer-based transistor with multifunctional memory and synaptic functions

Artificial Synapses Based on Organic Electrochemical Transistors with Self-Healing Dielectric Layers

Organic synaptic devices based on ionic gel with reduced leakage current

Organic-Inorganic Hybrid Synaptic Transistors: Methyl-Silsesquioxanes-Based Electric Double Layer for Enhanced Synaptic Functionality and CMOS Compatibility

Realization of Tunable Artificial Synapse Through Ambipolar Charge Trapping in Organic Transistor with Pentacene/poly(α-Methylstyrene) Architecture

Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems Applications

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

Synaptic devices with sodium alginate ionic gel gating for global regulation

Oxide-Based Synaptic Transistors for Neuromorphic Systems

Organic optoelectronic synapse based on photon-modulated electrochemical doping

Hodgkin–Huxley Artificial Synaptic Membrane Based on Protonic/Electronic Hybrid Neuromorphic Transistors

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Multi-terminal pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor with multi-mode cognitive activities

Solution-Processed, Electrolyte-Gated In2O3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications.