Multiferroic and Ferroelectric Phases Revealed in 2D Ti3C2Tx MXene Film for High Performance Resistive Data Storage Devices

Rabia Tahir,Sabeen Fatima,Syedah Afsheen Zahra,Deji Akinwande,Hu Li,Syed Hassan Mujtaba Jafri,Syed Rizwan
DOI: https://doi.org/10.1038/s41699-023-00368-2
IF: 10.516
2023-01-01
npj 2D Materials and Applications
Abstract:Multiferroic materials, showing simultaneous ferroelectric and ferromagnetic orders, are considered to be promising candidates for future data storage technology however, the multiferroic phenomenon in two-dimensional (2D) materials is rarely observed. We report a simple approach to observe frequency-dependent ferroelectricity and multiferroicity in 2D Ti3C2Tx MXene film at room-temperature. To study the frequency and poling effect on ferroelectricity, we performed electric polarization vs. electric field (P-E) measurement at different frequencies, measured under zero and non-zero static magnetic fields. The results not only indicate a clear frequency dependence of electric domains owing to varying time relaxation during reversal dynamic but also showed magnetic field control of electric polarization thus, confirmed the presence of strong magneto-electric (ME) coupling at room-temperature. The existence of ME coupling was attributed to the coupling between disordered electric dipoles with local spin moments as well reduced dielectric loss after heat-treatment. Moreover, the ferroelectric Ti3C2Tx MXene film was employed as an active layer within the resistive data storage device that showed a stable switching behavior along with improved on/off ratio in comparison to non-ferroelectric Ti3C2Tx active layer. The unique multiferroic behavior along with ferroelectric-tuned data storage devices reported here, will help understand the intrinsic nature of 2D materials and will advance the 2D ferroelectric data storage industry.
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