Enhanced Electrostatic Energy Storage Through a Multi-Element Doping Design

S. S. Kang,J. Yang,B. B. Yang,X. J. Zhan,Y. M. Zhang,Y. Q. Dai,D. P. Song
DOI: https://doi.org/10.1063/5.0135242
IF: 4
2023-01-01
Applied Physics Letters
Abstract:Element doping is a common and efficient method that can be used to substantially enhance dielectric energy storage performance. Despite continued efforts and progress in this field, investigations of the different effects of single- and multi-element doping on energy storage properties are lacking. In this work, we study the dependence of microstructures and energy storage properties on element doping using a BaBi4Ti4O15 material system. Our results reveal that an amorphous phase appears and the grain size decreases with an increasing number of doping elements. Such a scenario is conducive to improving the breakdown field strength and suppressing polarization-switching hysteresis. Therefore, we achieve an ultrahigh energy storage density of 76 J/cm3 and an efficiency of 82.5% using the multi-element-doped composition. This work provides guidance for preparing high-energy-storage films.
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