Abstract:Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric response materials. The rise of two-dimensional (2D) materials, thanks to their distinct electronic structure, extreme dimensional confinement and strong light-matter interactions, provides new material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which is rare to meet at the same time for all existing 2D materials, either graphene, transition metal dichalcogenide or black phosphorous. Herein we demonstrate a new infrared photodetector based on 2D Bi2O2Se crystals, whose main characteristics are superb in the whole 2D family: high sensitivity of ~65 A/W at 1200 nm and ultrafast intrinsic photoresponse of ~1 ps at room temperature. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of 2D oxyselenide. With additional merits of mass production, excellent stability and flexibility, 2D oxyselenide detectors should open new avenues in highly-sensitive, high-speed, low-cost, flexible infrared photodetection and imaging.

Author Correction: Ultrafast and Highly Sensitive Infrared Photodetectors Based on Two-Dimensional Oxyselenide Crystals

Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

Author Correction: Ultra-thin high-efficiency mid-infraredtransmissive Huygens meta-optics

Author Correction: High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Author Correction: Near-infrared Tunable Metalens Based on Phase Change Material Ge2Sb2Te5

Publisher Correction: Chalcogenide Glass-on-graphene Photonics

Publisher Correction: Tunable long persistent luminescence in the second near-infrared window via crystal field control

Publisher Correction: Nucleation-controlled Growth of Superior Lead-Free Perovskite Cs3Bi2I9 Single-Crystals for High-Performance X-ray Detection

Author Correction: Ultra-bright Raman Dots for Multiplexed Optical Imaging

Author Correction: Nanoscale-femtosecond Dielectric Response of Mott Insulators Captured by Two-Color Near-Field Ultrafast Electron Microscopy

Correction: Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.

Correction: Halogen-bonded charge-transfer co-crystal scintillators for high-resolution X-ray imaging

Polarization-Sensitive Perfect Absorbers At Near-Infrared Wavelengths: Erratum (Vol 21, Pg A111, 2013)

Correction: Corrigendum: Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays

Publisher Correction: Direct Thermal Neutron Detection by the 2D Semiconductor 6Liinp2se6

Author Correction: Molecular Resolution Imaging by Repetitive Optical Selective Exposure

Correction: Corrigendum: Optoelectronic Crystal of Artificial Atoms in Strain-Textured Molybdenum Disulphide

Publisher Correction: Enhanced Ferroelectricity in Ultrathin Films Grown Directly on Silicon.

Author Correction: Cation disorder engineering yields AgBiS2 nanocrystals with enhanced optical absorption for efficient ultrathin solar cells

Correction to "Enabling Fast Photoresponse in Hybrid Perovskite/MoS 2 Photodetectors by Separating Local Photocharge Generation and Recombination"