Abstract:Compact thin-film lithium niobate (TFLN) modulators with low half-wave voltage $\text{V}_{\pi }$ are highly desirable for many applications. In particular, modulators with $\text{V}_{\pi }~\sim ~1$ V would allow direct driving by CMOS circuits, but they normally require a long modulation length of several centimeters. Folded TFLN modulators exhibit reduced $\text{V}_{\pi }$ together with a small device footprint. However, previously reported schemes suffer from complicated device fabrication procedure to maintain the relative direction of electric field with respect to the TFLN crystal polarization after electrode folding. In this work, a meandered X-cut TFLN Mach–Zehnder (MZ) modulator with specially designed capacitively-loaded traveling-wave electrodes (CL-TWEs) is demonstrated. Interdigitated T-rails are employed to reverse the electric field in the folded region for continuous accumulation of optical phase shift. Ultra-low $\text{V}_{\pi }$ of 1.08 V is achieved on an 8-mm-long modulator containing three-segments of 7-mm-long modulation sections, together with a 3-dB electro-optic bandwidth around 43 GHz. The broadband meandered modulator with ultra-low half-wave voltage as well as a compact footprint has the potential to be directly driven by CMOS electronics.

Millimeter-scale Meandered Thin-film Lithium Niobate Modulator with 0.72-\Mathrm{v}\ \mathrm{v} \Pi$.

A Highly Compact Thin-film Lithium Niobate Modulator with Low Half-wave Voltage

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Broadband Meandered Thin-Film Lithium Niobate Modulator with Ultra-Low Half-Wave Voltage

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

Wideband Thin-Film Lithium Niobate Modulator with Low Half-Wave-voltage Length Product

Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Thin Film LiNbO3 Modulator Based on LiNbO3-Silica Hybrid Waveguide with Narrow Electrode Gap

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

High-Performance Thin-Film Lithium Niobate Modulator with Low-k Underfill for over 110 GHz Electro-Optic Response

Ultra-compact Thin Film Lithium Niobate Electro-optic Modulator with Metal-filled Photonic Crystal Waveguide

High Efficiency Single-Sideband Modulator Using Coupled Bragg Grating Resonators on Thin-Film Lithium Niobate

Thin Film Lithium Niobate Electro-optic Modulator Based on a Slow Wave Structure

Ultra-wide Bandwidth Thin-film LiNbO<inf>3</inf> Modulator with Record-Low Half-wave-voltage Length Product

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Ultra-wide Bandwidth Thin-film LiNbO<sub>3</sub> Modulator with Record-Low Half-wave-voltage Length Product

Broadband Capacitive-Loaded Thin-Film Lithium Niobate Modulator with On-Chip Terminal Resistor

Low half-wave-voltage, ultra-high bandwidth thin-film LiNbO3 modulator based on hybrid waveguide and periodic capacitively loaded electrodes

Low Half-wave-voltage Thin Film LiNbO3 Electro-optic Modulator Based on a Compact Electrode Structure

Compact low-half-wave-voltage thin film lithium niobate electro-optic phase modulator fabricated by photolithography assisted chemo-mechanical etching