Halogen ions doping mediated exciton states modulation in MoS2 quantum dots for fluorescence tuning and optical anti-counterfeiting
Fengyi Wu,Yuan-Sheng Cheng,Konglin Wu,Rong Wu,Rui Yu,Pingli Guan,Yuwen Cheng,Wengjiang Li,Jiliang Yang,Xian-Wen Wei
DOI: https://doi.org/10.1039/d4tc00660g
IF: 6.4
2024-04-11
Journal of Materials Chemistry C
Abstract:Developing an ideal luminescent material with exceptional performance in various aspects, such as affordability, low toxicity, high photostability and security, is vital for advanced optical anti-counterfeiting. Here,halogen-doping-dependent luminescence MoS2 quantum dots were synthesized by a simple hydrothermal method for optical anti-counterfeiting ink. The results show that F–, Cl– and Br– doping make notable fluorescence blueshifts of MoS2 quantum dots and significant enhancements in photoluminescence quantum yield (PLQY) up to 5.7, 5.0, and 3.2 times, respectively. However, I– incorporation causes a fluorescence redshift and a 25% decrease of PLQY. This mechanism is elucidated by Density function theory (DFT) and experiments. Specifically, F–, Cl– and Br– doping localizes surface electrons and blocks sulfur vacancies in MoS2 quantum dots, enhancing the release of neutral excitons from trions and defect-bound excitons. Conversely, I– doping increases surface charge and sulfur vacancies, favouring the conversion of neutral excitons into trions and defect-bound excitons.The halogen-doped MoS2 quantum dots are engineered as security ink, demonstrating high concealment , excellent photostability and easy fabricating. The study offers a novel way of tailoring fluorescence of MoS2 quantum dots, potentially extending to other transition metal dichalcogenide quantum dots and their optical anti-counterfeiting implementations.
materials science, multidisciplinary,physics, applied