A Family of above Room-Temperature Multiferroic Semiconductor Oxides by Design

Long Chen,Wen Dong,Dirui Wu,Wenrong Xiao,Ying Yang,Jian Wang,Hao Huang,Z. C. Xia,Tao Wang,Guangzu Zhang,Wei Luo,Shenglin Jiang,Wanbiao Hu,Qiuyun Fu
DOI: https://doi.org/10.2139/ssrn.4307881
2022-01-01
SSRN Electronic Journal
Abstract:Room-temperature multiferroic semiconductors with emerging photo-spin hall effect and electrically write magnetism are promising for next generation low-power optical communication and information storage. However, the indirect nature of the cross-coupling between ferroelectric phase and ferromagnetic phase makes it challenging for multi-ferroelectrics with switchable ferroic orders via magnetoelectric coupling. Conventional multiferroics, such as lone pair ferroelectricity with d-electron magnetism and d0 ferroelectricity with f-electron magnetism are generally hard to simultaneously achieve switchable room temperature ferroic orders and semiconductor properties. Inspired by the diluted magnetic semiconductor systems and diluted ferroelectric semiconductor via defect-engineering, here, we propose a family of diluted multiferroic semiconductor oxides with room temperature switchable ferroic orders and visible-light absorption. By taking Fe doped PZT with morphotropic phase boundary (MPB) as an example, above room temperature ferroelectric and ferromagnetic can be simultaneously achieved. The introducing of Fe and oxygen vacancies in the MPB forms a magneto-dielectrically complexed defect dipoles that further couple with the host due to the high interface energy of the MPB composition. Moreover, significant UV-Vis-NIR light photoabsorption properties originated from the defect energy levels can be achieved. We believe this work initiate the design of optically active multiferroic semiconductors.
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