Abstract:Across‐layer sliding ferroelectricity that arises from the asymmetry of next‐neighbor interlayer couplings is proposed, where the vertical polarizations of intercalated centro‐symmetric 2D materials like graphene bilayer can be switched via multilayer sliding, which may exist in a series of other heterolayers, including molecular systems. It may clarify a previously unexplained phenomenon and be utilized for high‐density data storage. Although the monolayers of most 2D materials are non‐ferroelectric with highly symmetric lattices, symmetry breaking may take place in their bilayers upon some stacking configuration, giving rise to so‐called sliding ferroelectricity where the vertical polarizations can be electrically reversed via interlayer translation. However, it is not supposed to appear in systems like graphene bilayer with centro‐symmetry at any stacking configuration, and the origin of the recently reported ferroelectricity (Nature 2020, 588, 71) in graphene bilayer intercalated between h‐BN remains mysterious. Here, a type of across‐layer sliding ferroelectricity that arises from the asymmetry of next‐neighbor interlayer couplings is proposed. The first‐principles evidence is shown that the vertical polarizations in intercalated centro‐symmetric 2D materials like graphene bilayer can be switched via multilayer sliding, which is likely to be the origin of the observed ferroelectric hysteresis. Moreover, such ferroelectricity may exist in a series of other heterolayers with quasi‐degenerate polar states, like graphene bilayer or trilayer on BN substrate, or even with a molecule layer on surface where each molecule can store 1‐bit data independently, resolving the bottleneck issue of sliding ferroelectricity for high‐density data storage.

Interlayer Registry Dictates Interfacial 2D Material Ferroelectricity

Interlayer Registry Determines the Sliding Potential of Layered Metal Dichalcogenides: The case of 2H-MoS2

Ferroelectricity in 2D Elemental Materials

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Sliding ferroelectricity in bilayer honeycomb structures: A first-principles study

Interlayer-spin-interaction-driven Sliding Ferroelectricity in a van der Waals Magnetic Heterobilayer

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

Resolving Polarization Switching Pathways of Sliding Ferroelectricity in Trilayer 3R-MoS2

Optical fingerprints of two-dimensional interlayer-sliding multiferroic materials

Sliding induced multiple polarization states in two-dimensional ferroelectrics

Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Electronic Interpretation of Interlayer Energy Landscape in Layered Materials

General Theory for Bilayer Stacking Ferroelectricity

Direct observation of geometric and sliding ferroelectricity in an amphidynamic crystal

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics

Polarization Saturation in Multi-layered Interfacial Ferroelectrics

Ferroelectric Exchange Bias Affects Interfacial Electronic States

Layer and spontaneous polarizations in perovskite oxides and their interplay in multiferroic bismuth ferrite

Interplay between charge ordering and geometric ferroelectricity in Lu Fe 2 O 4 / LuFe O 3 superlattices

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Modulation of Polarization in Sliding Ferroelectrics by Introducing Intrinsic Electric Fields