Abstract:Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles less than 1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior work. Using conductive atomic force microscopy (CAFM), we show that the stacking orientation of the two TMD crystals has a profound impact on the atomic reconstruction, consistent with recent theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental work on graphene bilayers and hBN/graphene vdWH. Transmission electron microscopy (TEM) provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provides fundamental insight into the behavior of this important class of heterostructures.

Lattice Reconstruction in MoSe_2-WSe_2 Heterobilayers Synthesized by Chemical Vapor Deposition

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Imaging lattice reconstruction in homobilayers and heterobilayers of transition metal dichalcogenides

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Excitons in mesoscopically reconstructed moiré heterostructures

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices

Excitons in a reconstructed moiré potential in twisted WSe2/WSe2 homobilayers

Tunable Out-of-Plane Reconstructions in Moiré Superlattices of Transition Metal Dichalcogenide Heterobilayers

Laterally Extended States of Interlayer Excitons in Reconstructed MoSe$_2$/WSe$_2$ Heterostructures

Imaging moiré flat bands in three-dimensional reconstructed WSe2/WS2 superlattices

Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers

Lattice reconstruction induced multiple ultra-flat bands in twisted bilayer WSe2

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Two-Dimensional Gase/Mose2 Misfit Bilayer Heterojunctions by Van Der Waals Epitaxy

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Moir\'e lattice-induced formation and tuning of hybrid dipolar excitons in twisted WS$_2$/MoSe$_2$ heterobilayers

Impact of atomic reconstruction on optical spectra of twisted TMD homobilayers

Intralayer charge-transfer moiré excitons in van der Waals superlattices