HfZrOx Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency

Yue Peng,Qiuxia Wu,Zhe Wang,Fenning Liu,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1109/led.2022.3218862

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:A hybrid 1T-1C HfZrOx( HZO)-DRAM/FRAM (D-FRAM) enabling non-volatile memory (NVM) and DRAM modes at 130 nm node are experimentally demonstrated. Excellent data retention characteristics at the D-FRAMarray were achieved in the NVM mode. Low operation voltage (2 V) and further improved endurance (>10(14)) in the DRAM mode were also realized by avoiding polarization switching. Moreover, the hybrid D-FRAM implemented in this work had a unified hardware structure, which helped to realize dual NVM and DRAM advantages, thereby supporting the low latency and low power data movement between them in the hybrid arrays.