Investigation of the Interface Electronic Characteristics of Β-Ga2o3 (1 0 0)/4H-Sic (0 0 0 1)

Bei Xu,Jichao Hu,Jiaqi Meng,Xiaomin He,Hongjuan Cheng,Jian Wang,Xi Wang,Hongbin Pu

DOI: https://doi.org/10.1016/j.jcrysgro.2022.126951

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:•The β-Ga2O3 (100)/4H-SiC (0001) models with six configurations were investigated.•The interface with Si-O configuration has the highest thermodynamic stability.•Si-O interface model has the best bonding strength.•Strong Si-O chemical bond will be formed at the Si-O interface.