Abstract:In recent years, the ecosystem and human health have been severely impacted by environmental pollution caused by organic pollutants that are difficult to degrade. In response to this issue, extensive research has been conducted on semiconductor-based photocatalysts, particularly heterojunction composites, as they exhibit photocatalytic degradation properties. Among these, the S-scheme heterojunction, a newly proposed concept, has garnered domestic and international attention. This attention is primarily due to its strong redox capacity and ability to separate photo-generated carriers efficiently. Bi2WO6 and Bi2MoO6, as members of bismuth-series semiconductors, are considered promising candidates for constructing S-scheme heterojunctions. This can be attributed to their unique layered structure, appropriate band gap, and responsiveness to visible light. Moreover, Bi2XO6-based (X = W, Mo) S-scheme heterojunction photocatalysts can address the drawbacks associated with the rapid recombination of photo-excited carriers, limited light response range, and inferior redox ability found in Bi2XO6. These heterojunctions hold great potential and can be used in various fields if synergy between multiple components is achieved and photocatalytic activity is improved. To date, numerous reduction and oxidation semiconductors have been employed in the preparation of S-scheme heterojunction photocatalysts with Bi2XO6. This review provides an initial understanding of the origin and characteristics of S-scheme heterojunctions. The review also presents a comparison of the properties of these heterojunctions and other previously studied heterojunctions. It also encompasses various aspects of the design and synthesis of Bi2XO6-based S-scheme heterojunctions. Furthermore, the review offers a comprehensive introduction to Bi2XO6-based S-scheme heterojunction photocatalysts for the degradation of organic contaminants. The focus is primarily on the developments made in the past four years. These recent advancements include the design of Bi2XO6-based binary-semiconductor or multiple-semiconductor S-scheme heterojunctions using direct methods. Additionally, doping other elements in Bi2XO6 and incorporating suitable metals or supported materials have been explored. Finally, several optimized strategies for constructing Bi2XO6-based S-scheme heterojunctions are proposed based on current research findings. The review concludes with an outlook on the potential challenges that may arise in the near future.

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