Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires: Publisher’s Note

Xiren Chen,H. Alradhi,Zh. M. Jin,Liangqian Zhu,A. M. Sanchez,Shufang Ma,Qiandong Zhuang,Jun Shao

DOI: https://doi.org/10.1364/ol.478124

IF: 3.6

2022-01-01

Optics Letters

Abstract:This publisher’s note contains corrections to Opt. Lett. 47, 5208 (2022)10.1364/OL.473154.

What problem does this paper attempt to address?

Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires.

Xiren Chen,H. Alradhi,Zh. M. Jin,Liangqing Zhu,A. M. Sanchez,Shufang Ma,Qiandong Zhuang,Jun Shao

DOI: https://doi.org/10.1364/ol.473154

IF: 3.6

2022-01-01

Optics Letters

Abstract:Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid -infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a ref-erence. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40 -140 K and up to approx-imately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high -temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analy-ses for narrow-gap NW evaluation.(c) 2022 Optica Publishing Group
Plasmon-enhanced Luminescence in Novel Complex Conjugated Polymer Nanoparticles: Publisher’s Note

Jiawei Lang,Pengqi Lu,Gang Bi,Chunfeng Cai,Huizhen Wu

DOI: https://doi.org/10.1364/ol.43.000231

2018-01-01

Abstract:This publisher's note corrects errors in the affiliations in Opt. Lett.42, 3789 (2017).OPLEDP0146-959210.1364/OL.42.003789.
Correction: Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Jiahao Cao,Hanjie Zhang,Xiaodong Pi,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1039/d1na90098f

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:Correction for ‘Enhanced photoluminescence of silicon quantum dots in the presence of both energy transfer enhancement and emission enhancement mechanisms assisted by the double plasmon modes of gold nanorods’ by Jiahao Cao et al. , Nanoscale Adv. , 2021, 3 , 4810–4815, DOI: 10.1039/D1NA00287B.
Correction to Self-Assembly Growth of In-Rich InGaAs Core-Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity.

Chen Zhou,Xu-Tao Zhang,Kun Zheng,Ping-Ping Chen,Wei Lu,Jin Zou

DOI: https://doi.org/10.1021/acs.nanolett.7b04039

IF: 10.8

2019-01-01

Nano Letters

Abstract:ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Self-Assembly Growth of In-Rich InGaAs Core–Shell Structured Nanowires with Remarkable Near-Infrared PhotoresponsivityChen ZhouChen ZhouMore by Chen Zhouhttp://orcid.org/0000-0002-4619-9014, Xu-Tao ZhangXu-Tao ZhangMore by Xu-Tao Zhanghttp://orcid.org/0000-0001-5259-5745, Kun Zheng*Kun ZhengMore by Kun Zheng, Ping-Ping ChenPing-Ping ChenMore by Ping-Ping Chen, Wei LuWei LuMore by Wei Lu, and Jin Zou*Jin ZouMore by Jin Zouhttp://orcid.org/0000-0001-9435-8043Cite this: Nano Lett. 2019, 19, 3, 2188Publication Date (Web):February 27, 2019Publication History Published online27 February 2019Published inissue 13 March 2019https://doi.org/10.1021/acs.nanolett.9b00803Copyright © 2019 American Chemical SocietyRIGHTS & PERMISSIONSArticle Views1049Altmetric-Citations1LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (214 KB) Get e-Alerts Get e-Alerts
Highly Efficient Fluorescent and Hybrid White Organic Light-Emitting Diodes Based on a Bimolecular Excited System: Publisher’s Note

Erdong Zhang,Cong Chen,Wencheng Zhao,Duxu Yan,Jihua Tang,Jintao Wang,Ping Chen,Ren Sheng

DOI: https://doi.org/10.1364/ol.524948

IF: 3.6

2024-01-01

Optics Letters

Abstract:This publisher’s note contains a correction to Opt. Lett. 48, 5771 (2023)10.1364/OL.506371.
Highly efficient fluorescent and hybrid white organic light-emitting diodes based on a bimolecular excited system: publisher's note

Erdong Zhang,Cong Chen,Wencheng Zhao,Duxu Yan,Jihua Tang,Jintao Wang,Ping Chen,Ren Sheng

DOI: https://doi.org/10.1364/ol.524948

IF: 3.6

2024-04-05

Optics Letters

Abstract:Erdong Zhang, Cong Chen, Wencheng Zhao, Duxu Yan, Jihua Tang, Jintao Wang, Ping Chen, Ren Sheng This publisher's note contains a correction to Opt. Lett.48, 5771 (2023)10.1364/OL.506371. [Opt. Lett. 49, 1928-1928 (2024)]

optics
Ten-Fold Enhancement of Inas Nanowire Photoluminescence Emission with an Inp Passivation Layer

Pamela Jurczak,Yunyan Zhang,Jiang Wu,Ana M. Sanchez,Martin Aagesen,Huiyun Liu

DOI: https://doi.org/10.1021/acs.nanolett.7b00803

IF: 10.8

2017-01-01

Nano Letters

Abstract:In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.
Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

Ruiyi Chen,Guannan Jiang,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/ol.38.003354

2013-01-01

Abstract:We correct the calculation method [Opt. Lett.35, 1335 (2010)] of enhancement of nonreciprocal phase shift on the magneto-optical material boundary.
Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Xiren Chen,Qiandong Zhuang,H. Alradhi,Zh. M. Jin,Liangqing Zhu,Xin Chen,Jun Shao

DOI: https://doi.org/10.1021/acs.nanolett.6b04629

IF: 10.8

2017-01-01

Nano Letters

Abstract:Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.
Author Correction: In-plane Selective Area InSb–Al Nanowire Quantum Networks

Roy L. M. Op het Veld,Di Xu,Vanessa Schaller,Marcel A. Verheijen,Stan M. E. Peters,Jason Jung,Chuyao Tong,Qingzhen Wang,Michiel W. A. de Moor,Bart Hesselmann,Kiefer Vermeulen,Jouri D. S. Bommer,Joon Sue Lee,Andrey Sarikov,Mihir Pendharkar,Anna Marzegalli,Sebastian Koelling,Leo P. Kouwenhoven,Leo Miglio,Chris J. Palmstrøm,Hao Zhang,Erik P. A. M. Bakkers

DOI: https://doi.org/10.1038/s42005-020-0324-4

2020-01-01

Abstract:A Correction to this paper has been published: https://doi.org/10.1038/s42005-021-00578-4
Enhanced Luminescence Properties of InAs Nanowires Via Organic and Inorganic Sulfide Passivation

Baobao Li,Shimin Li,Yan Sun,Shengjuan Li,Gang Chen,Xingjun Wang

DOI: https://doi.org/10.1088/1361-6528/ab3742

IF: 3.5

2019-01-01

Nanotechnology

Abstract:InAs nanowires (NWs) have been considered to be highly suitable for future nanoscale photonic applications in mid-wave infrared region. However, progress in this area has been seriously hampered because of the poor radiative efficiency of InAs NWs attributed to their non-radiative (NR) surface. Herein, we demonstrated that a significant improvement of optical performances of InAs NWs grown by chemical vapor deposition could be achieved via sulfur passivation process. Luminescence properties of InAs NWs via organic sulfide (ODT) and inorganic sulfide ((NH4)2S) passivation were investigated by detailed photoluminescence (PL) measurement, which exhibited ∼17-fold enhancement in the intensity of optical emission compared to unpassivated InAs NWs. Moreover, the results of this investigation revealed that compared to ODT passivation, (NH4)2S passivation provided a more effective method to enhance the luminescence intensity even up to room temperature. This improvement of optical emission arises from the efficient passivation of surface defect states which act as competing NR centers. Furthermore, the stability of the passivated InAs NWs was investigated by PL measurement as a function of storage time in air. These findings are important for the successful implementation of optoelectronic devices based on InAs NWs.
Correction: Core–shell like glass containing lanthanide doped nanocrystals for efficient luminescence

Qunhuo Liu,Ying Tian,Zhen Xiao,Jiawei Zhang,Wenhua Tang,Xufeng Jing,Junjie Zhang,Shiqing Xu

DOI: https://doi.org/10.1039/c9cc90268f

IF: 4.9

2019-01-01

Chemical Communications

Abstract:Correction for ‘Core–shell like glass containing lanthanide doped nanocrystals for efficient luminescence’ by Qunhuo Liu et al., Chem. Commun., 2018, 54, 13092–13095.
Correction: Surface Organic Ligand-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetimes

Lishuang Wang,Ying Lv,Jie Lin,Jialong Zhao,Xingyuan Liu,Ruosheng Zeng,Xun Wang,Bingsuo Zou

DOI: https://doi.org/10.1039/d2tc90025d

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘Surface organic ligand-passivated quantum dots: toward high-performance light-emitting diodes with long lifetimes’ by Lishuang Wang et al. , J. Mater. Chem. C , 2021, 9 , 2483–2490, DOI: 10.1039/D0TC05391K.
Correction: From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate

Nannan Qu,Yan Lei,Xiaogang Yang,Xiaojing Hu,Wencai Zhao,Chaoliang Zhao,Zhi Zheng

DOI: https://doi.org/10.1039/d0tc90209h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate’ by Nannan Qu <italic>et al.</italic>, <italic>J. Mater. Chem. C</italic>, 2020, <bold>8</bold>, 8451–8456, DOI: 10.1039/d0tc01188f.
Correction: Elaborating the Interplay Between the Detecting Unit and Emitting Unit in Infrared Quantum Dot Up-Conversion Photodetectors.

Qiulei Xua,Xinxin Yang,Jiao,Fei Li,Ruiguang Chang,Lei Wang,A Qiang Wang,Zhenghui Wu,Huaibin Shen,Zuliang Du

DOI: https://doi.org/10.1039/d3nr90227g

IF: 6.7

2024-01-01

Nanoscale

Abstract:Correction for ‘Elaborating the interplay between the detecting unit and emitting unit in infrared quantum dot up-conversion photodetectors’ by Qiulei Xu et al. , Nanoscale , 2023, 15 , 8197–8203, https://doi.org/10.1039/D3NR01237A.
Corrigendum: Plasmonic/Nonlinear Optical Material Core/Shell Nanorods As Nanoscale Plasmon Modulators and Optical Voltage Sensors

Anxiang Yin,Qiyuan He,Zhaoyang Lin,Liang Luo,Yuan Liu,Sen Yang,Hao Wu,Mengning Ding,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1002/anie.201700978

2017-01-01

Angewandte Chemie

Abstract:The TEM images presented in Figure 1 of this Communication were inadvertently mixed up with previously published images,1 which do not represent the actual samples (with different aspect ratios and different LSPR peaks) used in the subsequent spectroscopic studies. A new Figure 1 with the correct TEM images of the actual samples used in the spectroscopic studies is shown below. This correction does not change the conclusion of the spectroscopic studies. The authors apologize for this oversight. TEM images for Au/PANI NRs with different shell thicknesses. a, b) TEM images for Au/PANI NRs with a shell thickness of about 5 to 10 nm. c, d) TEM images for Au//PANI NRs with a shell thickness of about 20 nm. Scale bar: 200 nm (a, c), 20 nm (b, d).
Correction: From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate

Nannan Qu,Yan Lei,Xiaogang Yang,Xiaojing Hu,Wencai Zhao,Chaoliang Zhao,Zhi Zheng

DOI: https://doi.org/10.1039/d0tc90209h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate’ by Nannan Qu et al., J. Mater. Chem. C, 2020, 8, 8451–8456, DOI: 10.1039/d0tc01188f.
Publisher Correction: Tunable long persistent luminescence in the second near-infrared window via crystal field control

Jianmin Nie,Yang Li,Shanshan Liu,Qiuqun Chen,Qi Xu,Jianrong Qiu

DOI: https://doi.org/10.1038/s41598-020-61344-0

IF: 4.6

2020-01-01

Scientific Reports

Abstract:n amendment to this paper has been published and can be accessed via a link at the top of the paper.
Corrigendum to “crystallography of Phase Transformation in the Self-Inclined InAs Nanowires Grown on GaAs{111}” [scr. Mater. 121 (2016) 79–83]

Zhilin Liu,Zhi Zhang,Ripeng Jiang,Xiaoqian Li,Mingxing Zhang,Dong Qiu

DOI: https://doi.org/10.1016/j.scriptamat.2016.06.017

IF: 6.302

2016-01-01

Scripta Materialia

Abstract:The authors regret “Au thin film” and caption of Fig. 1 were printed incorrectly; “Au thin film” should be deleted from Fig. 1. The correct version of Fig. 1 is shown below: 2. The sentence, “The ZB lattice parameters [35] are a = 0.40494 nm with space group F4−3m. The WZ lattice parameters [35] are a = 0.2665 nm and c = 0.4947 nm with space groupP6/mmc.”, was also printed incorrectly. However, the calculation results are still right. The correct version is indicated as follows: “The ZB lattice parameters [35] are a = 0.606 nm with space group F4−3m. The WZ lattice parameters [35] are a = 0.427 nm, c = 0.703 nm with space group P6mc.” The authors would like to apologise for any inconvenience caused.
Novel Type‐II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection

Handong Li,Hayfaa Alradhi,Zhiming Jin,Ezekiel A. Anyebe,Ana M. Sanchez,Wojcioech M. Linhart,Robert Kudrawiec,Hehai Fang,Zhiming Wang,Weida Hu,Qiandong Zhuang

DOI: https://doi.org/10.1002/adfm.201705382

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:The control of optical and transport properties of semiconductor heterostructures is crucial for engineering new nanoscale photonic and electrical devices with diverse functions. Core-shell nanowires are evident examples of how tailoring the structure, i.e., the shell layer, plays a key role in the device performance. However, III-V semiconductors bandgap tuning has not yet been fully explored in nanowires. Here, a novel InAs/AlSb core-shell nanowire heterostructure is reported grown by molecular beam epitaxy and its application for room temperature infrared photodetection. The core-shell nanowires are dislocation-free with small chemical intermixing at the interfaces. They also exhibit remarkable radiative emission efficiency, which is attributed to efficient surface passivation and quantum confinement induced by the shell. A high-performance core-shell nanowire phototransistor is also demonstrated with negative photoresponse. In comparison with simple InAs nanowire phototransistor, the core-shell nanowire phototransistor has a dark current two orders of magnitude smaller and a sixfold improvement in photocurrent signal-to-noise ratio. The main factors for the improved photodetector performance are the surface passivation, the oxide in the AlSb shell and the type-II bandgap alignment. The study demonstrates the potential of type-II core-shell nanowires for the next generation of photodetectors on silicon.

Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires: Publisher’s Note

Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires.

Plasmon-enhanced Luminescence in Novel Complex Conjugated Polymer Nanoparticles: Publisher’s Note

Correction: Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Correction to Self-Assembly Growth of In-Rich InGaAs Core-Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity.

Highly Efficient Fluorescent and Hybrid White Organic Light-Emitting Diodes Based on a Bimolecular Excited System: Publisher’s Note

Highly efficient fluorescent and hybrid white organic light-emitting diodes based on a bimolecular excited system: publisher's note

Ten-Fold Enhancement of Inas Nanowire Photoluminescence Emission with an Inp Passivation Layer

Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Author Correction: In-plane Selective Area InSb–Al Nanowire Quantum Networks

Enhanced Luminescence Properties of InAs Nanowires Via Organic and Inorganic Sulfide Passivation

Correction: Core–shell like glass containing lanthanide doped nanocrystals for efficient luminescence

Correction: Surface Organic Ligand-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetimes

Correction: From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate

Correction: Elaborating the Interplay Between the Detecting Unit and Emitting Unit in Infrared Quantum Dot Up-Conversion Photodetectors.

Corrigendum: Plasmonic/Nonlinear Optical Material Core/Shell Nanorods As Nanoscale Plasmon Modulators and Optical Voltage Sensors

Correction: From BiI<sub>3</sub> to CuBiI<sub>4</sub>: a striking improvement in the photoelectric performance of a novel photodetector candidate

Publisher Correction: Tunable long persistent luminescence in the second near-infrared window via crystal field control

Corrigendum to “crystallography of Phase Transformation in the Self-Inclined InAs Nanowires Grown on GaAs{111}” [scr. Mater. 121 (2016) 79–83]

Novel Type‐II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection