Thickness Effect of In2O3:Sn Electrodes on the Performance of Flexible All-Thin Film Electrochromic Devices

Huiwen Jiang,Rui Wang,Han Lin,Hongbing Zhu,Meixiu Wan,Kai Shen,Yaohua Mai
DOI: https://doi.org/10.1016/j.tsf.2022.139460
IF: 2.1
2022-01-01
Thin Solid Films
Abstract:In this study, tin doped indium oxide (In2O3:Sn, ITO) thin films with a thickness range of 65-563 nm were prepared on polyethylene terephthalate substrates by radio frequency magnetron sputtering. Various material properties including the electrical properties, optical properties, morphologies, grain structures and bending properties were systematically investigated. All ITO thin films were employed as transparent conductive elec-trodes in the flexible all-thin-film electrochromic devices (ATF-ECDs). The flexible ATF-ECD with an 125 nm thick ITO electrode have achieved a high optical modulation of 64.2% at 600 nm, relatively fast electrochromic response speeds (1.2 s at bleaching step and 17 s at coloring step, respectively) and relatively high coloration efficiencies (181 cm(2)/C at bleaching step and 165 cm(2)/C at coloring step, respectively), which is regarded to be the optimal device in terms of comprehensively electrochromic performances and manufacturing cost.
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