A broadband CMOS amplifier in D band using pole-tuning technique with T-type network

Jiang Luo,Jin He,Guangyin Feng,Alit Apriyana,Qijun Huang,Hao Yu
DOI: https://doi.org/10.1109/IEEE-IWS.2018.8400821
2018-01-01
Abstract:A novel pole-tuning technique with T-type network for interstage bandwidth extension is proposed in this paper. For verification, a four-stage amplifier based on the pole-tuning technique with T-type network has been designed and implemented in a 65-nm bulk CMOS technology. The fabricated prototype achieves a peak gain of 9.5 dB at 122 GHz with a 3-dB bandwidth of 26 GHz, while consuming a dc power of 62 mW. The saturation output power and the output P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> are 8.6 dBm and 4.6 dBm, respectively. The chip occupies a small silicon area of 0.27 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including all testing pads.
What problem does this paper attempt to address?