Abstract:Recently, the successful synthesis of biphenylene network (BPN) monolayers (A. V. Matetskiy et al. , Appl. Surf. Sci. , 2021, 539 , 148144) has resulted in significant progress in the study of carbon materials. Inspired by this material, the electronic structures and transport properties of graphene–BPN–graphene (G–BPN–G) nanojunction-based nanodevices are systematically studied using density functional theory and non-equilibrium Green's function methods. The results show that the I – V curves of two-dimensional (2D) and quasi-one-dimensional (Q1D) G–BPN–G devices exhibit intrinsic negative differential resistance (NDR) characteristics regardless of the electronic transport direction. But the electronic transport following the zigzag direction ( I z ) is faster than that along the armchair direction ( I a ) below a bias of 0.8 V, but when the bias is further increased, I a is greater than I z . For armchair-edged G–BPN–G nanoribbons, the metal or semi-conductive behaviors are dependent on their width and the kinds of passivated atoms on the edges. Specifically, the nanoribbons achieve the transition from semiconducting to metallic with an increase of the number of BPN in the heterogeneous structure by F-passivation and H-passivation. Moreover, O-passivated G–BPN–G nanoribbons always show metallic characteristics. Adjustable metal to semiconductor devices can be achieved by varying the combination of H- and O-passivated cells in Q1D G–BPN–G nanoribbon-based nanodevices. Overall, these interesting results demonstrate that these novel G–BPN–G devices have promising practical applications in future electronic nanodevices.

Equipartition of Current in Metallic Armchair Nanoribbon of Graphene-Based Device

Electronic, Magnetic and Transport Properties of Graphene Ribbons Terminated by Nanotubes

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Current Partition and Conducting Topological Networks in Twisted Graphene Bilayer

Mechanical Manipulations on Electronic Transport of Graphene Nanoribbons

Quantum Transport Through a Graphene Nanoribbon-Superconductor Junction.

Electronic Transport Behavior in High-Quality Twisted Bilayer Graphene Nanoribbons

Transport Properties of AA-stacking Bilayer Graphene Nanoribbons

Electron Transport in Multi-Terminal Graphene Nanodevice with Inclined Cross Structures

Coherent Transport of Armchair Graphene Constrictions

Electronic Transport in Z-Shaped Graphene-Nanoribbons:Shape and Size Effects

Atomic Scale Investigation of the Abnormal Transport Properties in Bilayer Graphene Nanoribbon

Energy Gaps of Atomically Precise Armchair Graphene Sidewall Nanoribbons

Ferromagnetic Fluctuation in Doped Armchair Graphene Nanoribbons

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons

Electronic transport in the multi-terminal graphene nanodevices

Transport Properties of Graphene Nanoribbon-Based Molecular Devices.

Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study

Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons

Nearly perfect single-channel conduction in disordered armchair nanoribbons