Abstract:Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors through ab initio quantum transport simulations. Our simulation results demonstrate that, through appropriate doping and dielectric engineering, the sub-1-nm devices can meet the requirement of extended 'ITRS'(International Technology Roadmap for Semiconductors) $L_g$=0.34 nm. Following device optimization, we achieve impressive maximum on-state current densities of 409 $\mu A / \mu m$ for n-type and 800 $\mu A / \mu m$ for p-type high-performance (HP) devices, while n-type and p-type low-power (LP) devices exhibit maximum on-state current densities of 75 $\mu A / \mu m$ and 187 $\mu A / \mu m$, respectively. We employed the Wentzel-Kramer-Brillouin (WKB) approximation to explain the physical mechanisms of underlap and spacer region optimization on transistor performance. The underlap and spacer regions primarily influence the transport properties of sub-1-nm transistors by respectively altering the width and body factor of the potential barriers. Compared to ML $MoS_2$ transistors with a 1 nm gate length, our sub-1-nm gate length HP and LP ML $MoS_2$ transistors exhibit lower energy-delay products. Hence the sub-1-nm gate length transistors have immense potential for driving the next generation of electronics.

Wider Transmission Forbidden Gaps and Tamm State in a Complex Optoelectronic Superlattice Based on Monolayer MoS2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Graphene-based modulation-doped superlattice structures

Optoelectronic Superlattices Based On 2d Transition Metal Dichalcogenides

Electronic band gaps and transport properties in superlattice based on semi-Dirac material

Wave-vector-dependent Tunneling Transmission Characteristics in Periodic and Quasiperiodic Semiconductor Superlattices

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Transport Properties of Electrons in Quasiperiodic Magnetic Superlattices

Gated Tuned Superconductivity and Phonon Softening in Monolayer and Bilayer MoS2

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Tunneling States In Graphene Heterostructures Consisting Of Two Different Graphene Superlattices

Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Super-Klein tunneling and electron-beam collimation in the honeycomb superlattice

Electronic Transport In Asymmetric Graphene Superlattice With Internal Potential Well

Observation of Hole Transfer in MoS 2 /WS 2 Van der Waals Heterostructures

Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

The Nested Topological Band-Gap Structure for the Periodic Domain Walls in a Photonic Super-Lattice