Process-based Simulation of Autumn Phenology of Trees and the Regional Differentiation Attribution in Northern China

CHEN Yi-Zhu,LANG Wei-Guang,CHEN Xiao-Qiu
DOI: https://doi.org/10.17521/cjpe.2021.0254
2022-01-01
Abstract:Aims Revealing occurrence mechanisms of autumn phenology in temperate deciduous trees is of vital importance for improving estimation accuracies of ecosystem carbon sequestration and vegetation productivity.This study aimed to uncover the mechanisms of leaf senescence in response to environmental changes and simulation accuracies of autumn phenology through process-based models, and further investigate impacts of water conditions on leaf senescence mechanisms and simulation accuracy of autumn phenology.Methods We used the low temperature and photoperiod multiplicative model (TPM) to fit the first leaf coloration dates and leaf fall end dates of six tree species at more than 90 stations across the temperate zone of northern China from 1981 to 2014.The TPM contains two sub-models, i.e., photoperiod-initiated leaf senescence model (TPM p ) and temperature-initiated leaf senescence model.We evaluated simulation accuracies and their spatiotemporal variations of station-species specific optimum models, and analyzed regional differentiation of proportions of two sub-models among optimum models and its spatial dependence on arid-humid gradient.Important findings (1) Photoperiod shortening plays more important roles in initiating leaf senescence than temperature decrease.The simulated average root mean square errors of optimum models for first leaf coloration and leaf fall end dates are 6.9 d and 6.0 d, respectively.Proportions of significantly positive correlations between simulated and observed time series are 71.4% (first leaf coloration) and 83.6% (leaf fall end), respectively.(2) Simulated regional mean absolute errors and multi-year mean absolute errors of optimum models for first leaf coloration date and leaf fall end date are less than 2.4 d.However, amplitudes of temporal and spatial variations in
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