Wafer-scale Ultra-Broadband Perfect Absorber Based on Ultrathin Al-SiO2 Stack Metasurfaces.

Hong Li,Cheng Zhang,Xian Chao Liu,Peng Yu,Wei Dong Chen,Zheng Wei Xie,Ming Jun Tang,Jie Zheng,Ling Li

DOI: https://doi.org/10.1364/oe.468775

IF: 3.8

2022-01-01

Optics Express

Abstract:Broadband absorbers with high absorption, ultrathin thickness, and lithography-free planar structure have a wide range of potential applications, such as clocking and solar energy harvesting. For plasmonic metal materials, achieving perfect ultra-broadband absorption remains a challenge owing to the intrinsically narrow bandwidth. In this study, wafer-scale Al-SiO2 stack metasurfaces were experimentally fabricated to realize perfect ultra-broadband absorption. The experimental results show that the absorption for Al-SiO2 stack metasurfaces can reach up to 98% for the wavelength range from the ultraviolet to the near-infrared (350-1400 nm). It was experimentally verified that the absorption performance of Al-SiO2 stack metasurfaces is dependent on the layer number and is superior to that of other metal-based stack metasurfaces. This study will pave the way for development of plasmonic metal-based ultra-broadband absorbers as in low cost and high performance robust solar energy devices.