Abstract:The geometric structural optimization and electronic properties of double-walled silicon nanotubes (DWSiNTs) (n(in),m(in))@(6,mout) (n(in) = 3, 4, m(in) = 0 to nin, mout = 0 to 6) are studied in terms of the self-consistent charge density functional tight binding (SCC-DFTB) method. A suitable spacing range of initial model that can form a stable DWSiNT is explored. Most of the nanotubes present circular-like shapes of their cross-sectional configu-rations. When a DWSiNT has the same chiral angle, 0 or 30 in degree, in its inner and outer walls, a regular periodic structure develops. The bond length, inner and outer wall diameters, and wall spacing are also signif-icantly affected by changes in the chiral index. The stability of the nanotube is affected by three factors: the configuration, the diameter, and the regularity of the atomic arrangements. The electrons in the inner wall are transferred to the outer wall, and the electron distribution of the atoms in the outer wall tube has the regional distribution of the interval between the electron-obtaining and the electron-losing regions. Among the seven tubes with fully commensurate inner and outer walls, DWSiNTs (3,2)@(6,4) exhibit semi-metallic characteristics; the others exhibit semiconductor-like properties with a narrow band gaps. The band gap of DWSiNTs is changed by tuning the chirality index, resulting in the transition between direct and indirect band gaps of nanotubes, which can be adjusted to match the performance needs of different devices, inducing a metal-semiconductor transition and direct-indirect band gap transition. These theoretical studies provide references for the prepara-tion, and future application, of DWSiNTs.

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Study on the Structures and Electronic Properties of Double-Walled Silicon Nanotubes (4,min)@(8,mout) under External Electric Field by SCC-DFTB Calculations

Structure and thermophysical properties of single-wall Si nanotubes

Effects of Chiral Index, Vacancy Defects and External Electric Field on the Structures and Electronic Properties of DWSiNTs by SCC-DFTB Calculations

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Electronic Structures of Double-Walled Armchair SiC Nanotube under Transverse Electric Fields

Effects of Stone-Wales defects on structure and electrical properties of double-walled silicon nanotubes by SCC-DFTB method

Stable Nanotube Construction Conditions and Electronic Properties of Possible Si Double-Walled Nanotubes (nin,min)@(6,mout) (nin =3, 4) by SCC-DFTB Calculations

Effects of chiral indices on the atomic arrangements and electronic properties of Si double-walled nanotubes (6,min)@(9,mout) (min = 0 to 6, mout = 0 to 9) by SCC-DFTB calculations

The Effect of External Electric Fields on the Electronic Structure of (5,5)/(10,0) Metal–semiconductor Single Wall Carbon Nanotube Intramolecule Junction

Tuning the Electronic Properties of Single-Walled SiC Nanotubes by External Electric Field

Structure-dependent Optical Properties of Single-Walled Silicon Nanotubes

Bonding Modes and Electronic Properties of Single-Crystalline Silicon Nanotubes

Geometry and electronic stability of tungsten encapsulated silicon nanotubes.

Essential Electronic Properties of Silicon Nanotubes

Atomic structure and electronic properties of single-walled carbon nanotubes

Electronic Structures and Transportation Properties of Sub-60 Nm Long Single-Walled Carbon Nanotubes

Work Function of Single-wall Silicon Carbide Nanotube

The Electron Properties of Infinite Length Single-Walled Silicon Nanotubes Are Studied by Density Functional Theory

Atomic Packing Characteristics and Electronic Structures of Si Nanowires from Density Functional Tight Binding Calculations

Electronic Properties Of Single-Walled Silicon Nanotubes Compared To Carbon Nanotubes