Abstract:Constructing interface and defect systematic engineering strategies has been demonstrated to be an effective way to modulate electron transfer and nonlinear absorption properties in semiconductor heterojunction. However, the role of defect and interface strain in the interfacial electron transfer of MoX2 (X=Se, S, Te) @ZnO heterojunction remains poorly understood. Herein, by taking MoX2@ZnO as a heterojunction, we unravel that vacancies play a critical role in the interfacial electron transfer of heterojunction. The defects and interface engineering of MoX2@ZnO heterojunction for controlled charge transfer and electron excitation-relaxation is presented. Experimental characterization combined with first-principles calculations show that the defects effect promotes the transport of photogenerated carriers at the heterojunction interface, thereby inhibiting their rapid recombination. The DFT calculation confirmed that the electron band structure, state density and charge density distribution of the system changed after the formation of Mo-O bonds. On the basis of defects and interfacial stress as well as the effective charge transfer, the MoX2@ZnO heterojunction exhibit excellent excitation and emission behaviors. The nonlinear optical regulation behavior of TMDs is expected to be realized with the help of the defects and interfacial/surface synergistically modulated effect of ZnO nanoparticles. The local strain generation on the MoX2@ZnO heterojunction boundary provides a new method for the design of new heterogeneous materials, and will be of great significance to investigate the contact physical behavior and application between metals and two-dimensional (2D) semiconductors. This work provides some inspiration for constructing heterojunctions with rich defects and surface/interface charge transfer channels to promote tunable electron transfer dynamics, thereby achieving good nonlinear optical conversion efficiency and efficient charge separation in optoelectronic functional materials.

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