Rich-Interfacial Hollow Metal Sulfide Heterojunctions with Zn-Vacancy for Efficient Photocatalytic H2 Evolution

Fatang Li,Yi-lei Li,Shao-qiang Li,Ying Liu,Rui-hong Liu,Ying-juan Hao,Xiao-jing Wang,Xu-jia Liu
DOI: https://doi.org/10.2139/ssrn.4220089
2022-01-01
SSRN Electronic Journal
Abstract:Improving efficiency of carrier separation at the interface of semiconductor photocatalysts and developing efficient hierarchical heterostructures are the main objects in the field of photocatalysis. Herein, hollow ZnS/NiS nanocages containing Zn vacancy (VZn-ZnS/NiS) are synthesized using ZIF-8 as a template. Constructing heterojunctiont by the Ni2+ etched produce rich and tightly connected interfaces, which provides a guarantee for efficient transfer of electrons across the interface. A built-in electric field is constructed by flattening the flat band potential, which can accelerate the electron transport at the interface of the electron heterojunction. The experimental and DFT results show that the tight interface and Zn vacancies can rearrange electrons, resulting in a higher charge density at the interface and optimizing the Gibbs free energy of hydrogen adsorption. The optimal hydrogen production activity of VZn-ZnS/NiS is 10636 μmol h-1g-1, which is 31.9 times that of ZnS. This work provides an idea for the construction of hollow sulfide heterojunctions with rich interfaces for efficient photocatalytic hydrogen production.
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