Abstract:Harnessing short-lived photoexcited electron-hole pairs in metal nanostructures has the potential to define a new phase of optoelectronics, enabling control of athermal mechanisms for light harvesting, photodetection and photocatalysis. To date, however, the spatiotemporal dynamics and transport of these photoexcited carriers have been only qualitatively characterized. Plasmon excitation has been widely viewed as an efficient mechanism for generating non-thermal hot carriers. Despite numerous experiments, conclusive evidence elucidating and quantifying the full dynamics of hot carrier generation, transport, and injection has not been reported. Here, we combine experimental measurements with coupled first-principles electronic structure theory and Boltzmann transport calculations to provide unprecedented insight into the internal quantum efficiency, and hence internal physics, of hot carriers in photoexcited gold (Au)-gallium nitride (GaN) nanostructures. Our results indicate that photoexcited electrons generated in 20 nm-thick Au nanostructures impinge ballistically on the Au-GaN interface. This discovery suggests that the energy of hot carriers could be harnessed from metal nanostructures without substantial losses via thermalization. Measurements and calculations also reveal the important role of metal band structure in hot carrier generation at energies above the interband threshold of the plasmonic nanoantenna. Taken together, our results advance the understanding of excited carrier dynamics in realistically-scaled metallic nanostructures and lay the foundations for the design of new optoelectronic devices that operate in the ballistic regime.

The Carrier Dynamics in the GaN-nanowire Based Photoelectrochemical Photodetector

Nanowire Piezo‐phototronic Photodetector: Theory and Experimental Design

Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet Band

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Structurally Unraveling the Photocarrier Behavior of Cu 2 O/ZnO Heterojunction Photodetectors

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Engineering GaN/AuNC core–shell nanowire heterojunctions by gold nanoclusters with excitation-dependent behavior for enhancing the responsivity and stability of self-driven photodetectors

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level

Hot Carrier Dynamics in Photoexcited Gold Nanostructures: Role of Interband Excitations and Evidence for Ballistic Transport

Photocarrier Transport Reconstruction and Dramatical Performance Enhancement in Ultrawide-Bandgap Ε-Ga2o3 Photodetectors Via Surface Defect Passivation

Type-dependent hot carrier behavior in photoelectrochemical reduction and oxidation of Au/GaN junction photoelectrodes

Regulating the bipolar response of InAs nanowire photodetector and waveguide integration

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

Analytical photoresponses of gated nanowire photoconductors