Anomalous Thermal Transport Driven by Electron–Phonon Coupling in 2D Semiconductor H‐bp

Zizhen Zhou,Xiaolong Yang,Huixia Fu,Rui Wang,Xu Lu,Guoyu Wang,Xiaoyuan Zhou
DOI: https://doi.org/10.1002/adfm.202206974
IF: 19
2022-01-01
Advanced Functional Materials
Abstract:The electron-phonon coupling (EPC) in semiconductors is typically much weaker than phonon-phonon scattering and its effect on lattice thermal conductivity kappa(l) has long been considered negligible. Herein, using first-principle calculations, it is discovered that the EPC can be significant or even dominant over the intrinsic phonon-phonon scattering via doping in 2D semiconductor hexagonal boron phosphorus (h-BP). Filling electron pocket till van Hove singularity gradually strengthens the EPC and consequently diminishes the room-temperature kappa(l) by 25% and 80% for monolayer and bilayer h-BP, respectively. Strikingly, at high doping levels, the EPC drives phonon transport in bilayer h-BP to an anomalous regime where kappa(l) becomes nearly temperature (T) independent deviated from the intrinsic 1/T trend. This distinctive behavior is governed by the joint effects of horizontal mirror symmetry breaking, and weak phonon-phonon scattering stemming from the predominance of normal processes. Further considering electronic contributions, the abnormal T-independent thermal conductivity is still reserved, thereby facilitating the experimental exploration of EPC effect on kappa(l). This work unveils the exotic thermal transport phenomenon in one-atom-thick 2D semiconductors and offers a unique avenue to manipulate heat flow by externally controlling the EPC, which calls for future experimental verification.
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