Intensity-dependent transition from saturation absorption to reverse saturable absorption ways in TiSxSe2-x (0 ≤ x ≤ 1)
Yang Liu,Jing Wang,Dinggui Chen,Enze Wang,Jinxiang Chen,Qing Huang,Chenglu Liang,Yang Liu,Jing Wang,Dinggui Chen,Enze Wang,Jinxiang Chen,Qing Huang,Chenglu Liang
DOI: https://doi.org/10.1016/j.matlet.2022.132844
IF: 3
2022-11-01
Materials Letters
Abstract:The third-order nonlinear effects in the TiSxSe2-x(0 ≤ x ≤ 1) nanosheets were investigated via the open-aperture (OA) Z-scan technique. An input fluence dependent transition from saturation absorption (SA) to reverse saturable absorption (RSA) ways in TiSxSe2-x was discovered. Under lower laser intensities, only SA existed in the TiSxSe2-x. Higher incident laser intensities caused the transition from SA to RSA, due to the competition between ground state absorption and excited state absorption. This unique intensity-dependent absorption transition can be applied in all-optical logic gates, fast optical switch, optical limiter, mode storage.
materials science, multidisciplinary,physics, applied