Abstract:Organic-inorganic hybrid metal halide perovskites have emerged as a promising candidate for low-temperature thermoelectric conversion. However, challenges remain in heavily doping bulk perovskite single crystals without phase segregation or self-doping compensation issues to increase the carrier concentration. Previous efforts to enhance their thermoelectric performance rely on photoexcitation or surface/interface doping, which is not suitable for bulk devices to work in dark. This study achieves high monovalent and trivalent doping concentrations of up to 5 % in bulk single crystals of MAPbI 3 and MAPbBr 3 without phase segregation or defect formation. For monovalent doping, K + and Li + are incorporated into the perovskite lattice as interstitials. The resulting lattice distortion/microstrain enhances the electrical conductivity by 10 ∼ 100 times of undoped samples at 420 K. Trivalent doping using SbCl 3 , BiBr 3 , and BiI 3 significantly enhances the carrier concentration and electrical conductivity, up to 10 12 cm −3 and 0.038 S m −1 for MAPbBr 3 with 10 % BiI 3 at 465 K, respectively, which is 10 5 times of the undoped samples and 10 times of the best reports on doped MAPbBr 3 . Interestingly, the Bi 3+ dopant oxidizes the deep defect state Pb 0 , resulting in Bi + and Pb 2+ formation and contributing to the enhanced electrical conductivity. Enhanced thermoelectric figure of merit (ZT) is achieved in MAPbBr 3 with 5 % BiI 3 at 315 K, almost 100 times of the best reports on doped MAPbBr 3 . This study provides fundamental understanding of doping-modulated microstructural, charge carrier, and thermoelectric properties of hybrid halide perovskites, offering potential doping strategies to realize the theoretically predicted promising thermoelectric properties in their bulk single crystals for practical thermoelectric devices. The doping-modulated carrier transport will also guide the optimization of optoelectronic applications of halide perovskites for solar cells, light emitters, and photodetectors.

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