Highly-tunable Ferromagnetism in Cr-doped Layered Van Der Waals NiTe2 Crystals with High Air Stability

Boyuan Di,Pengzhen Zhang,Hongfei Yin,Peng Han,Hao Wu,Gaojie Zhang,Wen Jin,Xiaokun Wen,Wenfeng Zhang,Haixin Chang

DOI: https://doi.org/10.1039/d2ce00734g

IF: 3.756

2022-01-01

CrystEngComm

Abstract:In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.

What problem does this paper attempt to address?

Highly Tunable Near‐Room Temperature Ferromagnetism in Cr‐Doped Layered Td‐WTe2

Li Yang,Hao Wu,Liang Zhang,Wenfeng Zhang,Luying Li,Tappei Kawakami,Katsuaki Sugawara,Takafumi Sato,Gaojie Zhang,Pengfei Gao,Younis Muhammad,Xiaokun Wen,Boran Tao,Fei Guo,Haixin Chang

DOI: https://doi.org/10.1002/adfm.202008116

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:The discovery of type‐II Weyl semimetal states in layered transition metal dichalcogenides Td‐WTe2 indicates great potential for novel electronic, spintronic, and quantum devices. Theoretically, the interaction between the topological states and the magnetic ordered states of Td‐WTe2 enables the modulation of Weyl semimetal states by an external magnetic field. However, currently, ferromagnetism in layered Td‐WTe2 is still elusive and rarely observed. In this research, ferromagnetic order into WTe2 using magnetic chromium (Cr) doping with a two‐step Te flux strategy is introduced. The Curie temperature (Tc) and the ferromagnetic moment are well tuned with a Cr doping concentration. The Tc of the Cr‐doped layered Td‐WTe2 could be regulated from 182 to 283 K, which is close to room temperature. The saturation magnetic moment could be changed from 2.26 to 4.20 emu g–1, which is stronger than most values reported for these materials. Most intriguingly, the Cr‐doped layered Td‐WTe2 single crystals still exhibit semimetallic behavior and they possess very large magnetoresistance with obvious Shubnikov de Haas (SdH) quantum oscillations and an anomalous Hall effect. The findings offer feasible ways to induce and tune ferromagnetic orders in layered Td‐WTe2 and thus to control its topological phase with external magnetic fields.
Highly Tunable Near‐Room Temperature Ferromagnetism in Cr‐Doped Layered Td‐WTe 2

Li Yang,Hao Wu,Liang Zhang,Wenfeng Zhang,Luying Li,Tappei Kawakami,Katsuaki Sugawara,Takafumi Sato,Gaojie Zhang,Pengfei Gao,Younis Muhammad,Xiaokun Wen,Boran Tao,Fei Guo,Haixin Chang

DOI: https://doi.org/10.1002/adfm.202008116

IF: 19

2021-01-18

Advanced Functional Materials

Abstract:The discovery of type‐II Weyl semimetal states in layered transition metal dichalcogenides Td‐WTe2 indicates great potential for novel electronic, spintronic, and quantum devices. Theoretically, the interaction between the topological states and the magnetic ordered states of Td‐WTe2 enables the modulation of Weyl semimetal states by an external magnetic field. However, currently, ferromagnetism in layered Td‐WTe2 is still elusive and rarely observed. In this research, ferromagnetic order into WTe2 using magnetic chromium (Cr) doping with a two‐step Te flux strategy is introduced. The Curie temperature (Tc) and the ferromagnetic moment are well tuned with a Cr doping concentration. The Tc of the Cr‐doped layered Td‐WTe2 could be regulated from 182 to 283 K, which is close to room temperature. The saturation magnetic moment could be changed from 2.26 to 4.20 emu g–1, which is stronger than most values reported for these materials. Most intriguingly, the Cr‐doped layered Td‐WTe2 single crystals still exhibit semimetallic behavior and they possess very large magnetoresistance with obvious Shubnikov de Haas (SdH) quantum oscillations and an anomalous Hall effect. The findings offer feasible ways to induce and tune ferromagnetic orders in layered Td‐WTe2 and thus to control its topological phase with external magnetic fields.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Near room-temperature ferromagnetism in air-stable two-dimensional Cr1−xTe grown by chemical vapor deposition

Zhansheng Gao,Ming Tang,Junwei Huang,Jiabiao Chen,Wei Ai,Linglu Wu,Xinyue Dong,Yifei Ma,Zheshan Zhang,Lei Zhang,Yaping Du,Huixia Fu,Hongtao Yuan,Jinxiong Wu,Feng Luo

DOI: https://doi.org/10.1007/s12274-021-3909-7

IF: 9.9

2021-10-22

Nano Research

Abstract:Identifying air-stable two-dimensional (2D) ferromagnetism with high Curie temperature (Tc) is highly desirable for its potential applications in next-generation spintronics. However, most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism (Tc or air stability), rather than comprehensive promotion of both of them. Herein, ultrathin Cr1−xTe crystals grown by chemical vapor deposition (CVD) show thickness-dependent Tc up to 285 K. The out-of-plane ferromagnetic order is well preserved down to atomically thin limit (2.0 nm), as evidenced by anomalous Hall effect observed in non-encapsulated samples. Besides, the CVD-grown Cr1−xTe nanosheets present excellent ambient stability, with no apparent change in surface roughness or electrical transport properties after exposure to air for months. Our work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

Jielin Yang,Xinyu Wang,Shujing Li,Xina Wang,Minghu Pan,Mingzhong Ai,Hui Yuan,Xiaoniu Peng,Ruilong Wang,Quan Li,Fawei Zheng,Ping Zhang

DOI: https://doi.org/10.1021/acsnano.3c09654

IF: 17.1

2023-11-28

ACS Nano

Abstract:The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.
Highly Tunable Beyond-Room-Temperature Intrinsic Ferromagnetism in Cr-Doped Topological Crystalline Insulator SnTe Crystals

Younis Muhammad,Hongfei Yin,Gaojie Zhang,Hao Wu,Liang Zhang,Li Yang,Luji Li,Imran Tahir,Raza Hasan,Shahid Atiq,Wenfeng Zhang,Haixin Chang

DOI: https://doi.org/10.1021/acs.inorgchem.2c02029

IF: 4.6

2022-11-01

Inorganic Chemistry

Abstract:The combination of topological phase and intrinsic beyond-room-temperature ferromagnetism is expected to realize the quantum anomalous Hall effect at a high temperature. However, no beyond-room-temperature intrinsic ferromagnetism has been reported in either topological insulator or topological crystalline insulator (TCI) so far. Here, we report Cr-doping in TCI-phase SnTe crystals which possess highly tunable beyond-room-temperature intrinsic ferromagnetism including T(c), magnetic moment, and...

chemistry, inorganic & nuclear
Canted Antiferromagnetism in a Van Der Waals Metallic Material TaNi2Te2

Haige Tan,Yan Feng,Xiang Ma,Changlong Wang,Ruimin Li,Junjie Wu,Lizhen Huang,Yalin Lu,Bin Xiang

DOI: https://doi.org/10.1103/physrevmaterials.8.104412

IF: 3.98

2024-01-01

Physical Review Materials

Abstract:Since the discovery of intrinsic ferromagnetism in CrI3 and Cr2Ge2Te6, research has been initiated to explore diverse new van der Waals (vdW) magnetic materials. In this study, we successfully synthesized high-quality single crystals of the vdW material TaNi2Te2 using the chemical vapor transport method. Subsequently, we mechanically exfoliated the crystals into thin layers and investigated their physical properties. Our results reveal the presence of a rare canted antiferromagnetic behavior in TaNi2Te2, which is accompanied by remarkable metallic characteristics and elevated carrier mobility of 1.05 cm2/Vs. This study offers a approach to achieving canted antiferromagnetism in two-dimensional vdW systems, and provides intriguing possibilities in spintronics and electronic devices.
Precisely and continuously tunable, intrinsic, infinitely soluble alloy ferromagnetism in layered and quasi-layered CrVTe crystals

Hao Wu,Liang Zhang,Li Yang,Wenfeng Zhang,Gaojie Zhang,Younis Muhammad,Pengfei Gao,Shanfei Zhang,Haixin Chang

DOI: https://doi.org/10.1016/j.xcrp.2021.100347

IF: 8.9

2021-01-01

Cell Reports Physical Science

Abstract:Precise and continuous regulation of intrinsic two-dimensional (2D) ferromagnetism in van der Waals layered crystals is pivotal for the next generation of low-power electronic and spintronic devices. However, most van der Waals layered ferromagnetic crystals exhibit little adjustability of some ferromagnetic properties, such as saturation magnetization, coercivity, and easy axis of magnetization. Here, we report intrinsic, infinitely soluble alloy ferromagnetism in layered and quasi-layered CrVTe (CrxV1-3x/4Te2) crystals, which show intrinsic ferromagnetism with precise and continuous adjustability in a wide range, including Curie temperature (similar to 13.2-202.5 K), saturation magnetization (similar to 0.375-48.740 emu/g), coercivity (similar to 243.40-4930.33 Oe), magnetoresistance (approximately -0.14% to 32.39%), and anomalous Hall resistivity (similar to 0.1724-13.3148 mu Omega cm), and are different from most discovered van der Waals layered ferromagnetic crystals with highly limited concentrations of magnetic atoms. Our findings provide a highly tunable avenue for ferromagnetic 2D crystals and 2D spintronic devices.
Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a Van Der Waals Layered Cr-Doped 2H-Mote2 Semiconductor with an Out-of-Plane Anisotropy

Hongda Li

DOI: https://doi.org/10.1021/acsami.1c07680

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal dichalcogenide (TMDC) semiconductors limits the spintronic applications of these semiconductors. In this paper, we demonstrate a facile Te flux strategy to induce intrinsic ferromagnetism in the vdW layered 2H-MoTe2 semiconductor by magnetic chromium (Cr) doping. The Curie temperature (T-c) and saturation magnetization (M-s) can be well tuned by adjusting the Cr doping concentration. A notable Tc up to 275 K can be achieved for the vdW layered Cr-doped 2H-MoTe2 bulk crystals, which is much higher than that of recently reported van der Waals ferromagnetic semiconductors (Tc is mostly less than 70 K), in contrast to the diamagnetic feature of the pristine MoTe2. Meanwhile, the highest Ms of the vdW layered Cr-doped 2H-MoTe2 bulk crystals can reach 4.78 emu g(-1), which is stronger than most values reported for magnetic-element-doped van der Waals materials. In addition, all of the as-grown semiconducting Cr-doped 2H-MoTe2 (Cr-2H-MoTe2) single crystals display a large magnetic anisotropy with an out-of-plane easy axis of magnetization. The observed ferromagnetism in the Cr-2H-MoTe2 has intrinsic characteristics, which can be mainly attributed to the spin polarization caused by Cr doping as confirmed by the density functional theory (DFT) calculations. Our approach offers an avenue to tune the ferromagnetism in the vdW layered semiconductor and explore its diverse spintronic and magnetoelectric applications.
Air‐Stable 2D Cr 5 Te 8 Nanosheets with Thickness‐Tunable Ferromagnetism

Chao Chen,Xiaodie Chen,Changwei Wu,Xiao Wang,Yue Ping,Xin Wei,Xing Zhou,Jiangbo Lu,Lujun Zhu,Jiadong Zhou,Tianyou Zhai,Junbo Han,Hua Xu

DOI: https://doi.org/10.1002/adma.202107512

IF: 29.4

2021-11-12

Advanced Materials

Abstract:Two-dimensional (2D) magnetic materials have aroused widespread research interest owing to their promising application in spintronic devices. However, exploring new kinds of 2D magnetic materials with better stability and realizing their batch synthesis remain challenging. Herein, we report the synthesis of air-stable 2D Cr5Te8 ultrathin crystals with tunable thickness via tube-in-tube chemical vapor deposition (CVD) growth technology. We highlight the importance of tube-in-tube CVD growth, which can significantly suppress the equilibrium shift to the decomposition direction and facilitate that to the synthesis reaction direction, for the synthesis of high-quality Cr5Te8 with accurate composition. By precisely adjusting the growth temperature, the thickness of Cr5Te8 nanosheets was tuned from ∼1.2 nm to tens of nanometers, with the morphology changing from triangle to hexagon. Furthermore, magneto-optical Kerr effect measurements reveal that the Cr5Te8 nanosheet is ferromagnetic with strong out-of-plane spin polarization. The Curie temperature exhibits a monotonic increase from 100 to 160 K as the Cr5Te8 thickness increases from 10 to 30 nm and no apparent variation in surface roughness or magnetic properties after months of exposure to air. This study provides a robust method for the controllable synthesis of high-quality 2D ferromagnetic materials, which will facilitate research progress in spintronics.This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a van der Waals Layered Cr-Doped 2H-MoTe 2 Semiconductor with an Out-of-Plane Anisotropy

Li Yang,Hao Wu,Liang Zhang,Gaojie Zhang,Hongda Li,Wen Jin,Wenfeng Zhang,Haixin Chang

DOI: https://doi.org/10.1021/acsami.1c07680

2021-06-29

Abstract:The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal dichalcogenide (TMDC) semiconductors limits the spintronic applications of these semiconductors. In this paper, we demonstrate a facile Te flux strategy to induce intrinsic ferromagnetism in the vdW layered 2H-MoTe2 semiconductor by magnetic chromium (Cr) doping. The Curie temperature (Tc) and saturation magnetization (Ms) can be well tuned by adjusting the Cr doping concentration. A notable Tc up to 275 K can be achieved for the vdW layered Cr-doped 2H-MoTe2 bulk crystals, which is much higher than that of recently reported van der Waals ferromagnetic semiconductors (Tc is mostly less than 70 K), in contrast to the diamagnetic feature of the pristine MoTe2. Meanwhile, the highest Ms of the vdW layered Cr-doped 2H-MoTe2 bulk crystals can reach 4.78 emu g–1, which is stronger than most values reported for magnetic-element-doped van der Waals materials. In addition, all of the as-grown semiconducting Cr-doped 2H-MoTe2 (Cr-2H-MoTe2) single crystals display a large magnetic anisotropy with an out-of-plane easy axis of magnetization. The observed ferromagnetism in the Cr-2H-MoTe2 has intrinsic characteristics, which can be mainly attributed to the spin polarization caused by Cr doping as confirmed by the density functional theory (DFT) calculations. Our approach offers an avenue to tune the ferromagnetism in the vdW layered semiconductor and explore its diverse spintronic and magnetoelectric applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c07680?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c07680</a>.Powder XRD characterization of the Cr-2H-MoTe2 single crystals; AFM image to reveal the thickness of a Cr-2.1 nanosheet; microstructure characterization of the pristine 2H-MoTe2 and Cr-2H-MoTe2 single crystals; XPS spectra of the Cr-2.1 single crystals; thickness distribution histogram of the Cr-2.1 nanosheets; energy-dispersive X-ray analysis (EDAX) of the pristine 2H-MoTe2 and Cr-2H-MoTe2 single crystals; and magnetic parameters of hysteresis loops for the Cr-2H-MoTe2 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c07680/suppl_file/am1c07680_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet

Cheng Tan,Ji-Hai Liao,Guolin Zheng,Meri Algarni,Jia-Yi Lin,Xiang Ma,Edwin L. H. Mayes,Matthew R. Field,Sultan Albarakati,Majid Panahandeh-Fard,Saleh Alzahrani,Guopeng Wang,Yuanjun Yang,Dimitrie Culcer,James Partridge,Mingliang Tian,Bin Xiang,Yu-Jun Zhao,Lan Wang

DOI: https://doi.org/10.1103/PhysRevLett.131.166703

2024-03-20

Abstract:Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe 2 grown by chemical vapor deposition

Lingjia Meng,Zhang Zhou,Mingquan Xu,Shiqi Yang,Kunpeng Si,Lixuan Liu,Xingguo Wang,Huaning Jiang,Bixuan Li,Peixin Qin,Peng Zhang,Jinliang Wang,Zhiqi Liu,Peizhe Tang,Yu Ye,Wu Zhou,Lihong Bao,Hong-Jun Gao,Yongji Gong

DOI: https://doi.org/10.1038/s41467-021-21072-z

IF: 16.6

2021-01-01

Nature Communications

Abstract:The discovery of ferromagnetic two-dimensional van der Waals materials has opened up opportunities to explore intriguing physics and to develop innovative spintronic devices. However, controllable synthesis of these 2D ferromagnets and enhancing their stability under ambient conditions remain challenging. Here, we report chemical vapor deposition growth of air-stable 2D metallic 1T-CrTe 2 ultrathin crystals with controlled thickness. Their long-range ferromagnetic ordering is confirmed by a robust anomalous Hall effect, which has seldom been observed in other layered 2D materials grown by chemical vapor deposition. With reducing the thickness of 1T-CrTe 2 from tens of nanometers to several nanometers, the easy axis changes from in-plane to out-of-plane. Monotonic increase of Curie temperature with the thickness decreasing from ~130.0 to ~7.6 nm is observed. Theoretical calculations indicate that the weakening of the Coulomb screening in the two-dimensional limit plays a crucial role in the change of magnetic properties.
Tunable anomalous resistance and large magnetoresistance in HfTe5 by atom doping

Jiai Ning,Minghua Zhuge,Hongyu An,Liang He

DOI: https://doi.org/10.1063/5.0198085

IF: 4

2024-01-01

Applied Physics Letters

Abstract:The Dirac layered material HfTe5 renews significant interest due to its exotic band structure, leading to abundant transport properties, such as the anomaly resistance peak and its large magnetoresistance. Here, we prepared single crystals HfTe5 and Cr-doped CrxHf1-xTe5 and carried out their electrical transport measurements to explore the underlying physical origin of the anomaly resistance behavior and the large magnetoresistance. An anomalous resistance peak was observed in both intrinsic HfTe5 and the Cr-doped ones. Specifically, the peak temperature in the doped ones experiences an obvious shift from 52 to 34 K as the doping concentration x increases from 0 to 0.15, as well as the magnitude of the peak resistance is significantly enhanced. Furthermore, the magnetoresistance of CrxHf1-xTe5 is reduced by more than one order of magnitude compared with the intrinsic one. The significant reduction in magnetoresistance after Cr doping is attributed to the breaking of the balance between electron and hole carriers, which is confirmed by Kohler's plots. Meanwhile, in the sample where the magnetoresistance was minimized, we observed Shubnikov-de Haas oscillations. These observations illustrate that the large magnetoresistance is primarily contributed by the compensation of electrons and holes rather than the high mobility. Our findings provide valuable insight into how to engineer HfTe5 to achieve large magnetoresistance and its further applications in magnetic sensors and spintronics.
Tunable anomalous resistance and large magnetoresistance in HfTe5 by atom doping

Jiai Ning,Minghua Zhuge,Hongyu An,Liang He

DOI: https://doi.org/10.1063/5.0198085

IF: 4

2024-03-18

Applied Physics Letters

Abstract:The Dirac layered material HfTe5 renews significant interest due to its exotic band structure, leading to abundant transport properties, such as the anomaly resistance peak and its large magnetoresistance. Here, we prepared single crystals HfTe5 and Cr-doped CrxHf1−xTe5 and carried out their electrical transport measurements to explore the underlying physical origin of the anomaly resistance behavior and the large magnetoresistance. An anomalous resistance peak was observed in both intrinsic HfTe5 and the Cr-doped ones. Specifically, the peak temperature in the doped ones experiences an obvious shift from 52 to 34 K as the doping concentration x increases from 0 to 0.15, as well as the magnitude of the peak resistance is significantly enhanced. Furthermore, the magnetoresistance of CrxHf1−xTe5 is reduced by more than one order of magnitude compared with the intrinsic one. The significant reduction in magnetoresistance after Cr doping is attributed to the breaking of the balance between electron and hole carriers, which is confirmed by Kohler's plots. Meanwhile, in the sample where the magnetoresistance was minimized, we observed Shubnikov–de Haas oscillations. These observations illustrate that the large magnetoresistance is primarily contributed by the compensation of electrons and holes rather than the high mobility. Our findings provide valuable insight into how to engineer HfTe5 to achieve large magnetoresistance and its further applications in magnetic sensors and spintronics.

physics, applied
Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe2 grown by chemical vapor deposition

Lingjia Meng,Zhang Zhou,Mingquan Xu,Shiqi Yang,Kunpeng Si,Lixuan Liu,Xingguo Wang,Huaning Jiang,Bixuan Li,Peixin Qin,Peng Zhang,Jinliang Wang,Zhiqi Liu,Peizhe Tang,Yu Ye,Wu Zhou,Lihong Bao,Hong-Jun Gao,Yongji Gong

DOI: https://doi.org/10.1038/s41467-021-21072-z

IF: 16.6

2021-02-05

Nature Communications

Abstract:Abstract The discovery of ferromagnetic two-dimensional van der Waals materials has opened up opportunities to explore intriguing physics and to develop innovative spintronic devices. However, controllable synthesis of these 2D ferromagnets and enhancing their stability under ambient conditions remain challenging. Here, we report chemical vapor deposition growth of air-stable 2D metallic 1T-CrTe 2 ultrathin crystals with controlled thickness. Their long-range ferromagnetic ordering is confirmed by a robust anomalous Hall effect, which has seldom been observed in other layered 2D materials grown by chemical vapor deposition. With reducing the thickness of 1T-CrTe 2 from tens of nanometers to several nanometers, the easy axis changes from in-plane to out-of-plane. Monotonic increase of Curie temperature with the thickness decreasing from ~130.0 to ~7.6 nm is observed. Theoretical calculations indicate that the weakening of the Coulomb screening in the two-dimensional limit plays a crucial role in the change of magnetic properties.

multidisciplinary sciences
Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Wen-ning Ren,Kui-juan Jin,Jie-su Wang,Chen Ge,Er-Jia Guo,Cheng Ma,Can Wang,Xiulai Xu

DOI: https://doi.org/10.1038/s41598-021-82394-y

IF: 4.6

2021-02-02

Scientific Reports

Abstract:Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr 2 Ge 2 Te 6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr 2 Ge 2 Te 6 . These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.

multidisciplinary sciences
Room-Temperature Magnetic Phase Transition in an Electrically Tuned van der Waals Ferromagnet

Cheng Tan,Ji-Hai Liao,Guolin Zheng,Meri Algarni,Jia-Yi Lin,Xiang Ma,Edwin L. H. Mayes,Matthew R. Field,Albarakati,Majid Panahandeh-Fard,Saleh Alzahrani,Guopeng Wang,Yuanjun Yang,Dimitrie Culcer,James Partridge,Mingliang Tian,Bin Xiang,Yu-Jun Zhao,Lan Wang,Edwin L. H. Mayes,Sultan Albarakati

DOI: https://doi.org/10.1103/physrevlett.131.166703

IF: 8.6

2023-10-18

Physical Review Letters

Abstract:Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8×1021 cm−3 . We observed nonmonotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2 . The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices. https://doi.org/10.1103/PhysRevLett.131.166703 © 2023 American Physical Society

physics, multidisciplinary
Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang

DOI: https://doi.org/10.1007/s12274-020-3021-4

2019-09-21

Abstract:Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.

Mesoscale and Nanoscale Physics
Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Wen-ning Ren,Kui-juan Jin,Jie-su Wang,Chen Ge,Er-Jia Guo,Cheng Ma,Can Wang,Xiulai Xu

DOI: https://doi.org/10.1038/s41598-021-82394-y

IF: 4.6

2021-01-01

Scientific Reports

Abstract:The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr 2 Ge 2 Te 6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr 2 Ge 2 Te 6 . These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.

Highly-tunable Ferromagnetism in Cr-doped Layered Van Der Waals NiTe2 Crystals with High Air Stability

Highly Tunable Near‐Room Temperature Ferromagnetism in Cr‐Doped Layered Td‐WTe2

Highly Tunable Near‐Room Temperature Ferromagnetism in Cr‐Doped Layered Td‐WTe 2

Near room-temperature ferromagnetism in air-stable two-dimensional Cr1−xTe grown by chemical vapor deposition

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

Highly Tunable Beyond-Room-Temperature Intrinsic Ferromagnetism in Cr-Doped Topological Crystalline Insulator SnTe Crystals

Canted Antiferromagnetism in a Van Der Waals Metallic Material TaNi2Te2

Precisely and continuously tunable, intrinsic, infinitely soluble alloy ferromagnetism in layered and quasi-layered CrVTe crystals

Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a Van Der Waals Layered Cr-Doped 2H-Mote2 Semiconductor with an Out-of-Plane Anisotropy

Air‐Stable 2D Cr 5 Te 8 Nanosheets with Thickness‐Tunable Ferromagnetism

Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a van der Waals Layered Cr-Doped 2H-MoTe 2 Semiconductor with an Out-of-Plane Anisotropy

Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet

Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe 2 grown by chemical vapor deposition

Tunable anomalous resistance and large magnetoresistance in HfTe<sub>5</sub> by atom doping

Tunable anomalous resistance and large magnetoresistance in HfTe5 by atom doping

Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe2 grown by chemical vapor deposition

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Room-Temperature Magnetic Phase Transition in an Electrically Tuned van der Waals Ferromagnet

Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6