Abstract:Optoelectronic devices integrating visual imaging and recognition functions are achieved by employing 2D perovskite oxide/organic heterojunction. Through switching bias to modulate carrier and oxygen vacancy dynamics, the device exhibits photodetection property at zero bias and photosynaptic property at negative bias. This work provides a novel strategy to achieve low‐power consumption, easy‐switchable and functional integrated optoelectronic devices for artificial visual system. Optoelectronic devices with imaging and recognition capabilities are crucial for developing artificial visual system (AVS). Bias‐switchable photodetection and photosynaptic devices have been developed using 2D perovskite oxide/organic heterojunctions. This unique structure allows for modulated carrier dynamics under varied bias conditions, enabling the devices to function as photodetectors without bias and as photosynapses with bias. At zero bias, the device achieves high responsivity (≈0.36 A W−1 at 320 nm) and rapid response speed (0.57 s). Under a −0.5 V bias, it exhibits persistent photoconductivity (PPC), resulting in neuromorphic synaptic behaviors with a paired‐pulse facilitation (PPF) index exceeding 300%. Moreover, an 8 × 8 sensor array demonstrates image sensing and memory capabilities, showing in situ enhanced imaging when switching the bias from 0 to −0.5 V, and over 200 s of image memory. The image processing and recognition abilities are further explored by constructing an AVS using a 28 × 28 device array combined with an artificial neural network (ANN). The adjustable synaptic weight under different reverse biases allowed for optimized simulated recognition, achieving an accuracy of 92% after 160 training epochs. This work presents a novel method for creating dual‐functional photodetection and photosynaptic devices, paving the way for a more integrated and efficient AVS.

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