Abstract:Although enhanced performances of photovoltaic devices by embedding metal nanoparticals in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performances were investigated. The results showed that compared with reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception for light with wavelengths fall in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light.

Enhanced sensitivity and durability in photodetector of Ag/nanocellulose/Si via plasma-assisted synthesis

Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors.

Plasmon-enhanced Photoresponsivity and Detectivity of Silver Nanoparticles-incorporated Nanocomposites Flexible Photodetector

Localized Surface Plasmon Induced Position-Sensitive Photodetection in Silicon-Nanowire-Modified Ag/Si

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core-shell nanoparticles

Nano-Air-Channel Si Photodetectors with Enhanced Responsivity and Photocurrent

Ultraviolet–visible photodetectors based on surface plasmon-polymer coupled inorganic/organic thin film heterojunction

Electric-Induced Nonvolatile Enhancement of Lateral Photovoltaic Effect Observed in Chromium Nanofilm

High-Sensitivity Photodetectors Based On Silver Nanowires/Silicon Nanopillar Arrays

Simple Preparations for Plasmon-Enhanced Photodetectors

Plasmon-Enhanced Self-Powered UV Photodetectors Assembled by Incorporating Ag@SiO2 Core–Shell Nanoparticles into TiO2 Nanocube Photoanodes

Enhanced lateral photovoltaic effect observed in the structure of Ag/MoS<sub>2</sub> quantum dots/n-type Silicon

High sensitive position-dependent photodetection observed in Cu-covered Si nanopyramids.

Enhanced Lateral Photovoltaic Effect Observed in the Structure of Ag/MoS2 Quantum Dots/n-Type Silicon

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Giant Lateral Photovoltaic Effect in Ag/Porous Silicon/Si Structure for High-performance Near-Infrared Detection

Ag nanoparticles decorated AZO/ p -Si heterojunction UV photodetector

A Nanocomposite Ultraviolet Photodetector Based on Interfacial Trap-Controlled Charge Injection.

Facile Nanogold–Perovskite Enabling Ultrasensitive Flexible Broadband Photodetector with Pw Scale Detection Limit

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing