High-Yield Laser Fabrication of Single-Photon Emitters of High-Brightness and -Purity in Boron Nitride

Danyang Zhang,Lin Gan,Cun-Zheng Ning

DOI: https://doi.org/10.1364/quantum.2022.qth4b.7

2022-01-01

Abstract:Single-photon emitters were fabricated on hexagonal Boron-Nitride sheets by a femtosecond laser with the yield at 42.86%, photon purity up to 94%, and the corrected saturation intensity at 7.09 Mcps, all best record numbers.

What problem does this paper attempt to address?

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride.

Lin Gan,Danyang Zhang,Ruiling Zhang,Qiyao Zhang,Hao Sun,Yongzhuo Li,Cun-Zheng Ning

DOI: https://doi.org/10.1021/acsnano.2c04386

IF: 17.1

2022-01-01

ACS Nano

Abstract:Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser. Our use of a single pulse per defect pattern minimized heat-related damages and improved the purity of SPEs compared with the previous laser-based approaches. Under the optimized fabrication and post-treatment conditions, SPE arrays were successfully generated from the 3.0 μm defect patterns with 43% yield, the highest among the 2D-based top-down approaches. Importantly, we found that 100% of the bright defect patterns are SPEs with g2(0) < 0.5 under such conditions, with the lowest g2(0) = 0.06 ± 0.03. Our SPEs also exhibit the highest brightness with the saturation SPE rate at 7.15 million counts per second. We believe that our overall high-quality and large-scale approach will help a wide range of applications of SPEs in on-chip quantum technologies.
Single photon emission from plasma treated 2D hexagonal boron nitride.

Zai-Quan Xu,Christopher Elbadawi,Toan Trong Tran,Mehran Kianinia,Xiuling Li,Daobin Liu,Timothy B Hoffman,Minh Nguyen,Sejeong Kim,James H Edgar,Xiaojun Wu,Li Song,Sajid Ali,Mike Ford,Milos Toth,Igor Aharonovich

DOI: https://doi.org/10.1039/c7nr08222c

IF: 6.7

2018-01-01

Nanoscale

Abstract:Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.
Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Amit Bhunia,Pragya Joshi,Nitesh Singh,Biswanath Chakraborty,Rajesh V Nair

2023-07-21

Abstract:Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creating site-specific, stable, high emission rate single photon emitters with very low Huang-Rhys (HR) factor. Here, we discuss the photonic properties of site-specific, isolated, stable quantum emitter that emit single photons with a high emission rate and unprecedented low HR value of 0.6 at room temperature. Scanning confocal image confirms site-specific single photon emitter with a prominent zero-phonon line at ~578 nm with saturation photon counts of 105 counts/second. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46 ns. Low-energy electron beam irradiation and subsequent annealing are important to achieve stable single photon emitters.

Optics,Mesoscale and Nanoscale Physics,Quantum Physics
Single photon emitters in boron nitride: More than a supplementary material

M. Koperski,K. Nogajewski,M. Potemski

DOI: https://doi.org/10.1016/j.optcom.2017.10.083

IF: 2.4

2018-03-01

Optics Communications

Abstract:We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

optics
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride

Anand Kumar,Chanaprom Cholsuk,Ashkan Zand,Mohammad N. Mishuk,Tjorben Matthes,Falk Eilenberger,Sujin Suwanna,Tobias Vogl

DOI: https://doi.org/10.1063/5.0147560

2023-06-20

Abstract:Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The identical emitter fabrication at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. Our measurements of optically detected magnetic resonance have not revealed any addressable spin states. Using density functional theory, we attribute the experimentally observed emission lines to carbon-related defects, which are activated by the electron beam. Our scalable approach provides a promising pathway for fabricating room temperature single photon emitters in integrated quantum devices.

Quantum Physics,Mesoscale and Nanoscale Physics,Applied Physics,Optics
Isolated single photon emitters with low Huang-Rhys factor in hexagonal boron nitride at room temperature

Amit Bhunia,Pragya Joshi,Nitesh Singh,Biswanath Chakraborty,Rajesh V Nair

DOI: https://doi.org/10.1088/1361-6463/ad53db

2024-06-05

Journal of Physics D Applied Physics

Abstract:Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creation and detection of isolated, stable single photon emitter with high emission rate and with very low Huang-Rhys (HR) factor. Here, we discuss the quantum photonic properties of single, isolated, stable quantum emitter that emit single photons with a high emission rate and low HR value of 0.6 ± 0.2 at room temperature. Scanning confocal image confirms the presence of a deserted, single quantum emitter with prominent zero-phonon line at ~578 nm with well-separated phonon sideband at 626 nm. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46 ± 0.1 ns, reinforcing distinct features of single photon emitter. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable, reproducible single photon emitters.

physics, applied
Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride

Gabriele Grosso,Hyowon Moon,Benjamin Lienhard,Sajid Ali,Dmitri K. Efetov,Marco M. Furchi,Pablo Jarillo-Herrero,Michael J. Ford,Igor Aharonovich,Dirk Englund

DOI: https://doi.org/10.1038/s41467-017-00810-2

2016-11-11

Abstract:Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single-photon purity. We report high single photon count rates exceeding 10^7 counts/sec at saturation, which is the highest single photon detection rate for room-temperature single photon emitters, to our knowledge. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.

Mesoscale and Nanoscale Physics
Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride

Sergei Nedić,Karin Yamamura,Angus Gale,Igor Aharonovich,Milos Toth

2024-04-15

Abstract:Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (>> 10 nm). Here, we use in-situ time-resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B-centre generation. We show that the generation of B-centres is accompanied by quenching of a carbon-related emission at ~305 nm and that both processes are rate-limited by electromigration of defects in the hBN lattice. We identify problems that limit the efficacy and reproducibility of the emitter generation method, and solve them using a combination of optimized electron beam parameters and hBN pre- and post-processing treatments. We achieve B-centre quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights towards identification of the atomic structure of the B-centre quantum emitter.

Applied Physics,Materials Science
Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Mashnoon Alam Sakib,Brandon Triplett,William Harris,Naveed Hussain,Alexander Senichev,Melika Momenzadeh,Joshua Bocanegra,Polina Vabishchevich,Ruqian Wu,Alexandra Boltasseva,Vladimir M. Shalaev,Maxim R. Shcherbakov

DOI: https://doi.org/10.1021/acs.nanolett.4c02581

IF: 10.8

2024-09-25

Nano Letters

Abstract:Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are elementary building blocks for room-temperature on-chip quantum photonic technologies. However, fundamental challenges, such as slow radiative decay and nondeterministic placement of the emitters, limit their full potential. Here, we demonstrate large-area arrays of plasmonic nanoresonators (PNRs) for Purcell-induced room-temperature SPEs by engineering emitter-cavity coupling and enhancing radiative emission. Gold-coated silicon...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubes

Jonghoon Ahn,Zhujing Xu,Jaehoon Bang,Andres E Llacsahuanga Allcca,Yong P Chen,Tongcang Li

DOI: https://doi.org/10.1364/OL.43.003778

2018-08-01

Abstract:Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here, we investigate single-photon emissions from atomic defects in boron nitride nanotubes (BNNTs). We demonstrate the first, to the best of our knowledge, optical modulation of the quantum emission from BNNTs with a near-infrared laser. This one-dimensional system displays a bright single-photon emission, as well as high stability at room temperature, and is an excellent candidate for optomechanics. The fast optical modulation of a single-photon emission shows multiple electronic levels of the system and has potential applications in optical signal processing.
Narrowband quantum emitters over large spectral range with Fourier-limited linewidth in hexagonal boron nitride

A. Dietrich,M. Bürk,E. S. Steiger,L. Antoniuk,T. T. Tran,M. Nguyen,I. Aharonovich,F. Jelezko,A. Kubanek

DOI: https://doi.org/10.1103/PhysRevB.98.081414

2017-12-19

Abstract:Single defect centers in layered hexagonal boron nitride (hBN) are promising candidates as single photon sources for quantum optics and nanophotonics applications. However, until today spectral instability hinders many applications. Here, we perform resonant excitation measurements and observe Fourier-Transform limited (FL) linewidths down to $\approx 50$ MHz. We investigate optical properties of more than 600 quantum emitters (QE) in hBN. The QEs exhibit narrow zero-phonon lines (ZPL) distributed over a spectral range from 580 nm to 800 nm and with dipole-like emission with high polarization contrast. The emission frequencies can be divided into four main regions indicating distinct families or crystallographic structures of the QEs, in accord with ab-initio calculations. Finally, the emitters withstand transfer to a foreign photonic platform - namely a silver mirror, which makes them compatible with photonic devices such as optical resonators and paves the way to quantum photonics applications including quantum commmunications and quantum repeaters.

Mesoscale and Nanoscale Physics,Materials Science,Optics,Quantum Physics
Deterministic fabrication of blue quantum emitters in hexagonal boron nitride

Angus Gale,Chi Li,Yongliang Chen,Kenji Watanabe,Takashi Taniguchi,Igor Aharonovich,Milos Toth

DOI: https://doi.org/10.48550/arXiv.2111.13441

2021-11-26

Abstract:Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near infrared spectral ranges. However, atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, deterministic electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV). We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV). We attribute blue emitter generation to fragmentation of carbon clusters by electron impact and show that the robustness and universality of the emitter fabrication technique are enhanced by a pre-irradiation annealing treatment. Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for deterministic fabrication of quantum emitters in hBN.

Optics,Materials Science,Quantum Physics
Space-compatible cavity-enhanced single-photon generation with hexagonal boron nitride

Tobias Vogl,Ruvi Lecamwasam,Ben C. Buchler,Yuerui Lu,Ping Koy Lam

DOI: https://doi.org/10.1021/acsphotonics.9b00314

2019-02-08

Abstract:Sources of pure and indistinguishable single-photons are critical for near-future optical quantum technologies. Recently, color centers hosted by two-dimensional hexagonal boron nitride (hBN) have emerged as a promising platform for high luminosity room temperature single-photon sources. Despite the brightness of the emitters, the spectrum is rather broad and the single-photon purity is not sufficient for practical quantum information processing. Here, we report integration of such a quantum emitter hosted by hBN into a tunable optical microcavity. A small mode volume of the order of $\lambda^3$ allows us to Purcell enhance the fluorescence, with the observed excited state lifetime shortening. The cavity significantly narrows the spectrum and improves the single-photon purity by suppression of off-resonant noise. We explore practical applications by evaluating the performance of our single-photon source for quantum key distribution and quantum computing. The complete device is compact and implemented on a picoclass satellite platform, enabling future low-cost satellite-based long-distance quantum networks.

Quantum Physics,Materials Science,Optics
Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

Chao Lyu,Yaozheng Zhu,Pingfan Gu,Jiandong Qiao,Kenji Watanabe,Takashi Taniguchi,Yu Ye

DOI: https://doi.org/10.1063/5.0025792

IF: 4

2020-12-14

Applied Physics Letters

Abstract:For quantum photonic applications, such as quantum communication, optical quantum information processing, and metrology, solid-state sources of single-photon emitters are highly needed. Recently, single-photon emitters in two-dimensional (2D) van der Waals materials have attracted tremendous attention because of their atomic thickness, allowing for high photon extraction efficiency and easy integration into photonic circuits. In particular, a defect hosted by 2D hexagonal boron nitride (hBN) is expected to be a promising candidate for next-generation single-photon sources due to its chemical and thermal stability and high brightness at room temperature. Here, we report an effective method for generating single-photon emission in mechanically exfoliated hBN flakes by annealing in a carbon-rich environment. The one-step annealing in a mixed atmosphere (Ar:CH4:H2 = 15:5:1) greatly increases the single-photon emitter density in hBN. The resulting single-photon emission shows high stability and brightness. Our results provide an effective method for generating room-temperature single-photon emitters in 2D hBN.

physics, applied
Synthesis of Boron Nitride Nanotubes by Means of Excimer Laser Ablation at High Temperature

DP Yu,XS Sun,CS Lee,I Bello,ST Lee,HD Gu,KM Leung,GW Zhou,ZF Dong,Z Zhang

DOI: https://doi.org/10.1063/1.121236

IF: 4

1998-01-01

Applied Physics Letters

Abstract:Boron nitride nanotubes (BN-NTs) were synthesized by using excimer laser ablation at 1200 °C in different carrier gases. The main characteristic of the BN-NTs produced by this method is that nanotubes are of only one to three atomic layers thick, which could be attributed to the dominance of the axial growth rate over the radial growth rate. The diameter of the BN-NTs ranged from 1.5 to 8 nm. The tips of the BN-NTs are either a flat cap or of polygonal termination, in contrast to the conical ends of carbon nanotubes. The atomic ratio of boron to nitrogen as measured by means of parallel electron energy loss spectroscopy is 0.8, which is within the experimental error of the stoichiometry of hexagonal BN structure.
Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Mashnoon Alam Sakib,Brandon Triplett,William Harris,Naveed Hussain,Alexander Senichev,Melika Momenzadeh,Joshua Bocanegra,Ruqian Wu,Alexandra Boltasseva,Vladimir M. Shalaev,Maxim R. Shcherbakov

2024-05-04

Abstract:Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the emitters, limit their full potential. In this work, we experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs by engineering emitter-cavity coupling and enhancing radiative emission at room temperature. The plasmonic nanoresonator architecture consists of gold-coated silicon pillars capped with an alumina spacer layer, enabling a 10-fold local field enhancement in the emission band of native hBN defects. Confocal photoluminescence and second-order autocorrelation measurements show bright SPEs with sub-30 meV bandwidth and a saturated emission rate of more than 3.8 million counts per second. We measure a Purcell factor of 4.9, enabling average SPE lifetimes of 480 ps, a five-fold reduction as compared to emission from gold-free devices, along with an overall SPE yield of 21%. Density functional theory calculations further reveal the beneficial role of an alumina spacer between defected hBN and gold, as an insulating layer can mitigate the electronic broadening of emission from defects proximal to gold. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.

Optics,Mesoscale and Nanoscale Physics,Materials Science,Quantum Physics
Close-to-Atom Scale Laser Manufacturing for 30-Color Turn-key Single-Photon Emitters

Hong-Bo Sun,Xiao-Jie Wang,Hong-Hua Fang,Zhen-Ze Li,Dan Wang

DOI: https://doi.org/10.21203/rs.3.rs-2331982/v1

2023-01-01

Abstract:Abstract Atomic and close-to-atom scale manufacturing is now considered an avenue toward single-photon emitters, single-electron transistors, single-atom memory, and quantum-bit devices for future communication, computation, and sensing applications. Laser manufacturing is outstanding to this end for ease of beam manipulation and batch production, and no requirement for photomasks. It is, however, suffering from optical diffraction limit and lacks atomic and close-to-atom scale precision. Herein, we circumvent this limitation by exploiting a threshold tracing-and-lock-in method, whereby the 2-order gap between atomic point defect complexes and optical diffraction limit is surpassed. As a result, bright (up to 10 Mcounts s− 1) single-photon color centers are deterministically created from few-layer hBN with feature size of less than 5 nm and a near-unity yield. Around 94% of them emit monochromatically at around 30 individual wavelengths from 500 nm to 800 nm. A turn-key monochromic single-photon emitter of demanded color is attained by integrating it with 5-V blue laser diodes.
An Ultrastable and Robust Single-Photon Emitter in Hexagonal Boron Nitride

Wei Liu,Yi-Tao Wang,Zhi-Peng Li,Shang Yu,Zhi-Jin Ke,Yu Meng,Jian-Shun Tang,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1016/j.physe.2020.114251

IF: 3.369

2020-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Quantum emitters in van der Waals (vdW) materials have attracted lots of attentions in recent years, and shown great potentials to be fabricated as quantum photonic nanodevices. Especially, the single photon emitter (SPE) in hexagonal boron nitride (hBN) emerges with the outstanding room-temperature quantum performances, whereas the ubiquitous blinking and bleaching restrict its practical applications and investigations critically. The blister in vdW materials possessing stable structure can modify the local bandgap by strains on nanoscale, which is supposed to have the ability to fix this photostability problem. Here we report a blister-induced high-purity SPE in hBN under ambient conditions showing stable quantum-emitting performances, and no evidence of blinking and bleaching for one year. Remarkably, we observe the nontrivial successive activating and quenching dynamical process of the fluorescent defects at the SPE region under low pressures for the first time, and the robust recoverability of the SPE after turning back to the atmospheric pressure. The pressure tuned performance indicates the SPE origins from the lattice defect isolated and activated by the strain induced from the blister, and sheds lights on the future high-performance quantum sources based on hBN.
Laser manufacturing of spatial resolution approaching quantum limit

Xiao-Jie Wang,Hong-Hua Fang,Zhen-Ze Li,Dan Wang,Hong-Bo Sun

DOI: https://doi.org/10.1038/s41377-023-01354-5

2024-01-02

Abstract:Abstract Atomic and close-to-atom scale manufacturing is a promising avenue toward single-photon emitters, single-electron transistors, single-atom memory, and quantum-bit devices for future communication, computation, and sensing applications. Laser manufacturing is outstanding to this end for ease of beam manipulation, batch production, and no requirement for photomasks. It is, however, suffering from optical diffraction limits. Herein, we report a spatial resolution improved to the quantum limit by exploiting a threshold tracing and lock-in method, whereby the two-order gap between atomic point defect complexes and optical diffraction limit is surpassed, and a feature size of <5 nm is realized. The underlying physics is that the uncertainty of local atom thermal motion dominates electron excitation, rather than the power density slope of the incident laser. We show that the colour centre yield in hexagonal boron nitride is transformed from stochastic to deterministic, and the emission from individual sites becomes polychromatic to monochromatic. As a result, single colour centres in the regular array are deterministically created with a unity yield and high positional accuracy, serving as a step forward for integrated quantum technological applications.

optics

High-Yield Laser Fabrication of Single-Photon Emitters of High-Brightness and -Purity in Boron Nitride

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride.

Single photon emission from plasma treated 2D hexagonal boron nitride.

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Single photon emitters in boron nitride: More than a supplementary material

Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride

Isolated single photon emitters with low Huang-Rhys factor in hexagonal boron nitride at room temperature

Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride

Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride

Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubes

Narrowband quantum emitters over large spectral range with Fourier-limited linewidth in hexagonal boron nitride

Deterministic fabrication of blue quantum emitters in hexagonal boron nitride

Space-compatible cavity-enhanced single-photon generation with hexagonal boron nitride

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

Synthesis of Boron Nitride Nanotubes by Means of Excimer Laser Ablation at High Temperature

Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride

Close-to-Atom Scale Laser Manufacturing for 30-Color Turn-key Single-Photon Emitters

An Ultrastable and Robust Single-Photon Emitter in Hexagonal Boron Nitride

Laser manufacturing of spatial resolution approaching quantum limit