Photo-electro-striction in Halide Perovskite Semiconductors

Zeen Zhao,Yecheng Ding,Xuefeng Zhao,Yaojin Wang,Ben Xu,Guanghua Liu,Guoliang Yuan,Jun-Ming Liu

DOI: https://doi.org/10.1063/5.0099954

IF: 4

2022-01-01

Applied Physics Letters

Abstract:MAPbI3, MAPbBr3, and CsPbBr3 are excellent halide perovskite semiconductors with super long carrier diffusion length, long minority carrier lifetime, and large light absorption coefficient. Compared with the small intrinsic electrostriction, photocarriers induce a large photostriction in the surface layer. Furthermore, an electric field can efficiently separate the light excited electron–hole pairs, enhance photocarriers diffusion, and finally increase the crystal expansion, i.e., photo-electro-striction. For each crystal under 30 V/mm and in light with 450 nm wavelength and 840 mW/cm2, the photo-electro-striction is over four times of the pure electrostriction and is larger than the sum of photostriction and electrostriction. Most importantly, MAPbI3 single crystal shows a large photostriction of ∼0.35% and the photo-electro-striction of ∼0.64%. This work proves a very large photo-electro-striction as a result of the strong coupling among photocarriers, electric fields, and crystal lattices, which is important to develop semiconductor devices.