Growth, Rietveld Refinement, Raman Spectrum and Dislocation of Ca2+/Mg2+/Zr4+-substituted GGG: a Potential Substrate and Laser Host Material
Hongyuan Li,Dunlu Sun,Huili Zhang,Jianqiao Luo,Cong Quan,Yang Qiao,Kunpeng Dong,Yuwei Chen,Zhentao Wang,Maojie Cheng,Guangzhu Chen,Yin Hang
DOI: https://doi.org/10.1007/s10854-024-12777-0
2024-01-01
Journal of Materials Science Materials in Electronics
Abstract:The Ca2+/Mg2+/Zr4+-substituted Gd3Ga5O12 (SGGG) crystal is widely used as magneto-optical substrate, such as preparation of YIG series thin films by liquid phase epitaxy. Adaptation of the two is the most common problem in substrate applications. It’s important to summarize the behavior of growth for SGGG. In this work, we thoroughly investigated various physical parameters from different positions, lattice constants, quality and dislocations, all of which are crucial factors for the substrate. For this purpose, the SGGG crystal was grown by Czochralski (Cz) method with chemical formula of Ca0.47Gd2.53Mg0.20Zr0.76Ga3.94O12. These results serve as a reference to guide the growth process. For laser host materials, the hardness and the phonon energy are vital parameters. The Mohs hardness is 6.86, and the fitted Meyer index is about 2.05, suggesting that the SGGG single crystal exhibits relatively strong bruise resistance. The maximal phonon energy is 728 cm−1, according to the Raman spectrum, meaning that a relatively low thermal radiation from acoustic vibration. Furthermore, the energy gap is 3.30 eV, which can provide guidance on research in electronic performance.