Strong enhancement of superconductivity in the topological transition metal silicide W5Si3 by Re doping

Jifeng Wu,Guorui Xiao,Qinqing Zhu,Bin Liu,Yanwei Cui,Siqi Wu,Guang-Han Cao,Zhi Ren

DOI: https://doi.org/10.1039/d2qi00881e

IF: 7.779

2022-01-01

Inorganic Chemistry Frontiers

Abstract:Chemical doping leads to a strong enhancement of superconductivity in the topological transition metal silicide W5Si3.

What problem does this paper attempt to address?

Strong enhancement of superconductivity in the topological transition metal silicide W5Si3 by Re doping

Jifeng Wu,Guorui Xiao,Qinqing Zhu,Bin Liu,Yanwei Cui,Siqi Wu,Guang-Han Cao,Zhi Ren

DOI: https://doi.org/10.1039/d2qi00881e

IF: 7.779

2022-01-01

Inorganic Chemistry Frontiers

Abstract:We report the effect of Re doping in the prototype transition metal silicide W5Si3. Structural analysis shows that Re can substitute up to 20% of W in W5Si3 and its incorporation leads to an anisotropic shrinkage of the tetragonal lattice. T-c of W5-xRexSi3 is strongly enhanced with increasing Re content x from 2.45 K (x = 0) to 6.36 K (x = 1) and higher that of isostructural Mo5-xRexSi3 with the same valence electron count. This T-c enhancement is accompanied by a drastic increase in the upper critical field and attributed to the enhancement of electron-phonon coupling caused by doping-induced phonon softening. Theoretical calculations suggest that the electronic structure of undoped W5Si3 is characterized by strong Z(2) invariants (1;000) and this topological character is presumably preserved upon Re doping. Our study indicates that chemical doping provides a facile way to optimize superconductivity in topological transition metal silicides.
Doping-Induced Superconductivity in the Topological Semimetal Mo5Si3

JiFeng Wu,Chenqiang Hua,Bin Liu,Yanwei Cui,Qinqing Zhu,Guorui Xiao,Siqi Wu,Guanghan Cao,Yunhao Lu,Zhi Ren

DOI: https://doi.org/10.1021/acs.chemmater.0c02831

IF: 10.508

2020-01-01

Chemistry of Materials

Abstract:Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo5Si3 with a tetragonal structure. Partial substitution of Re for Mo in Mo5-xRexSi3 results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately x = 2. Over a wide doping range (0.5 <= x <= 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. T-c increases monotonically with x from 1.67 to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in T-c correlates well with the variation of the number of valence electrons and is mainly ascribed to the enhancement of electron-phonon coupling. In addition, band structure calculations reveal that superconducting Mo5-xRexSi3 exhibits nontrivial band topology characterized by Z(2) invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.
Doping-Induced Superconductivity in the Topological Semimetal Mo 5 Si 3

JiFeng Wu,Chenqiang Hua,Bin Liu,Yanwei Cui,Qinqing Zhu,Guorui Xiao,Siqi Wu,Guanghan Cao,Yunhao Lu,Zhi Ren

DOI: https://doi.org/10.1021/acs.chemmater.0c02831

IF: 10.508

2020-09-28

Chemistry of Materials

Abstract:Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo5Si3 with a tetragonal structure. Partial substitution of Re for Mo in Mo5–xRexSi3 results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately x = 2. Over a wide doping range (0.5 ≤ x ≤ 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. Tc increases monotonically with x from 1.67 to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in Tc correlates well with the variation of the number of valence electrons and is mainly ascribed to the enhancement of electron–phonon coupling. In addition, band structure calculations reveal that superconducting Mo5–xRexSi3 exhibits nontrivial band topology characterized by Z2 invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c02831?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c02831</a>.EDX spectra and calculated density of states as a function of energy for Mo5–xRexSi3 (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c02831/suppl_file/cm0c02831_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo$_5$Si$_3$

Bin-Bin Ruan,Jun-Nan Sun,Yin Chen,Qing-Song Yang,Kang Zhao,Meng-Hu Zhou,Ya-Dong Gu,Ming-Wei Ma,Gen-Fu Chen,Lei Shan,Zhi-An Ren

DOI: https://doi.org/10.1007/s40843-022-2102-8

2022-08-04

Abstract:By performing P doping on the Si sites in the topological semimetal Mo$_5$Si$_3$, we discover strong-coupling superconductivity in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0). Mo$_5$Si$_3$ crystallizes in the W$_5$Si$_3$-type structure with space group of $I4/mcm$ (No. 140), and is not a superconductor itself. Upon P doping, the lattice parameter $a$ decreases while $c$ increases monotonously. Bulk superconductivity is revealed in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0) from resistivity, magnetization, and heat capacity measurements. $T_c$ in Mo$_5$Si$_{1.5}$P$_{1.5}$ reaches as high as 10.8 K, setting a new record among the W$_5$Si$_3$-type superconductors. The upper and lower critical fields for Mo$_5$Si$_{1.5}$P$_{1.5}$ are 14.56 T and 105 mT, respectively. Moreover, Mo$_5$Si$_{1.5}$P$_{1.5}$ is found to be a fully gapped superconductor with strong electron-phonon coupling. First-principles calculations suggest that the enhancement of electron-phonon coupling is possibly due to the shift of the Fermi level, which is induced by electron doping. The calculations also reveal the nontrivial band topology in Mo$_5$Si$_3$. The $T_c$ and upper critical field in Mo$_5$Si$_{3-x}$P$_x$ are fairly high among pseudobinary compounds. Both of them are higher than those in NbTi, making future applications promising. Our results suggest that the W$_5$Si$_3$-type compounds are ideal platforms to search for new superconductors. By examinations of their band topologies, more candidates for topological superconductors can be expected in this structural family.

Superconductivity,Materials Science
Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7

Yanwei Cui,Siqi Wu,Qinqing Zhu,Guorui Xiao,Bin Liu,Jifeng Wu,Guanghan Cao,Zhi Ren

DOI: https://doi.org/10.1038/s41535-021-00372-z

IF: 6.856

2021-08-13

npj Quantum Materials

Abstract:Abstract Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re 3 Ge 7 , which undergoes a second-order metal–insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re 3 Ge 7− x Ga x . As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and T c exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re 3 Ge 7 is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re 3 Ge 7 provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
Reentrance of Interface Superconductivity in a High-Tc Cuprate Heterostructure

J. Y. Shen,C. Y. Shi,Z. M. Pan,L. L. Ju,M. D. Dong,G. F. Chen,Y. C. Zhang,J. K. Yuan,C. J. Wu,Y. W. Xie,J. Wu

DOI: https://doi.org/10.1038/s41467-023-42903-1

IF: 16.6

2023-01-01

Nature Communications

Abstract:Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La 2- x Sr x CuO 4 (0.45 ≤ x ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La 2- x Sr x CuO 4 /La 2 CuO 4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x = 0.8; but it revives at higher doping and fully recovers at x = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x = 0.8 and the weak-to-strong localization crossover in the La 2- x Sr x CuO 4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures.
Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re$_{3}$Ge$_{7}$

Yanwei Cui,Siqi Wu,Qinqing Zhu,Guorui Xiao,Bin Liu,Jifeng Wu,Guanghan Cao,Zhi Ren

DOI: https://doi.org/10.1038/s41535-021-00372-z

2021-05-13

Abstract:Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re$_{3}$Ge$_{7}$, which undergoes a second-order metal-insulator-like transition at $\sim$58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re$_{3}$Ge$_{7-x}$Ga$_{x}$. As a consequence, the phase transition is gradually suppressed and disappears above $x$ = 0.2. At this $x$ value, superconductivity emerges and $T_{\rm c}$ exhibits a dome-like doping dependence with a maximum value of 3.37 K at $x$ = 0.25. First-principles calculations suggest that the phase transition in Re$_{3}$Ge$_{7}$ is associated with an electronic instability driven by Fermi surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re$_{3}$Ge$_{7}$ provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.

Superconductivity
Enhanced Anisotropic Superconductivity in the Topological Nodal-Line Semimetal InxTaS2

Yupeng Li,Zhongxiu Wu,Jingang Zhou,Kunliang Bu,Chenchao Xu,Lei Qiao,Miaocong Li,Hua Bai,Jiang Ma,Qian Tao,Chao Cao,Yi Yin,Zhu-An Xu

DOI: https://doi.org/10.1103/physrevb.102.224503

IF: 3.7

2020-01-01

Physical Review B

Abstract:Coexistence of topological bands and charge density wave (CDW) in topological materials has attracted immense attentions because of their fantastic properties, such as axionic-CDW, three-dimensional quantum Hall effect, etc. In this work, a nodal-line semimetal InxTaS2 characterized by CDW and superconductivity is successfully synthesized, whose structure and topological bands (two separated Wely rings) are similar to In0.58TaSe2. A 2 x 2 commensurate CDW is observed at low temperature in InxTaS2, identified by transport properties and STM measurements. Moreover, superconductivity emerges below 0.69 K, and the anisotropy ratio of upper critical field [Gamma = H||ab c2(0)=H||c c2(0)] is significantly enhanced compared to 2H-TaS2, which shares the same essential layer unit. According to the Lawrence-Doniach model, the enhanced Gamma may be explained by the reduced effective mass in kx-ky plane, where Weyl rings locate. Therefore, this type of layered topological systems may offer a platform to investigate highly anisotropic superconductivity and to understand the extremely large upper critical field in the bulk or in the two-dimensional limit.
High-entropy silicide superconductors with W$_{5}$Si$_{3}$-type structure

Bin Liu,Wuzhang Yang,Guorui Xiao,Qinqing Zhu,Shijie Song,Guang-Han Cao,Zhi Ren

DOI: https://doi.org/10.1103/PhysRevMaterials.7.014805

2023-02-02

Abstract:We report the synthesis, crystal structure and physical properties of two new high-entropy silicides (HESs), namely (Nb$_{0.1}$Mo$_{0.3}$W$_{0.3}$Re$_{0.2}$Ru$_{0.1}$)$_{5}$Si$_{3}$ and (Nb$_{0.2}$Mo$_{0.3}$W$_{0.3}$Re$_{0.1}$Ru$_{0.1}$)$_{5}$Si$_{3}$. Structural analysis indicates that both HESs consist of a (nearly) single tetragonal W$_{5}$Si$_{3}$-type phase (space group $I$4/$mcm$) with a disordered cation distribution. Electrical resistivity, magnetic susceptibility and specific heat measurements show that (Nb$_{0.1}$Mo$_{0.3}$W$_{0.3}$Re$_{0.2}$Ru$_{0.1}$)$_{5}$Si$_{3}$ and (Nb$_{0.2}$Mo$_{0.3}$W$_{0.3}$Re$_{0.1}$Ru$_{0.1}$)$_{5}$Si$_{3}$ are weakly coupled bulk superconductors, which represent the first superconducting high-entropy nonoxide ceramics. In particular, these HESs have higher $T_{\rm c}$ values (3.2-3.3 K) compared with those of the binary counterparts, and their $B_{\rm c2}$(0)/$T_{\rm c}$ ratios are the largest among superconductors of the same structural type.

Superconductivity,Materials Science
ZrOsSi: a Z2 topological metal with a superconducting ground state

Sudeep Kumar Ghosh,Bin Li,Chunqiang Xu,Adrian D. Hillier,Pabitra K. Biswas,Xiaofeng Xu,Toni Shiroka

DOI: https://doi.org/10.3389/fphy.2023.1256166

IF: 3.718

2023-10-20

Frontiers in Physics

Abstract:The silicide superconductors (Ta, Nb, Zr)OsSi are among the best candidate materials for investigating the interplay of topological order and superconductivity. Here, we investigate in detail the normal-state topological properties of (Ta, Nb, Zr)OsSi, focusing on ZrOsSi, by employing a combination of 29 Si nuclear magnetic resonance (NMR) measurements and first-principles band-structure calculations. We show that, while (Ta, Nb)OsSi behave as almost ideal metals, characterized by weak electronic correlations and a relatively low density of states, the replacement of Ta (or Nb) with Zr expands the crystal lattice and shifts ZrOsSi towards an insulator. Our ab initio calculations indicate that ZrOsSi is a Z 2 topological metal with clear surface Dirac cones and properties similar to a doped strong topological insulator.

physics, multidisciplinary
Inducing Strong Superconductivity in WTe 2 by a Proximity Effect.

Ce Huang,Awadhesh Narayan,Enze Zhang,Yanwen Liu,Xiao Yan,Jiaxiang Wang,Cheng Zhang,Weiyi Wang,Tong Zhou,Changjiang Yi,Shanshan Liu,Jiwei Ling,Huiqin Zhang,Ran Liu,Raman Sankar,Fangcheng Chou,Yihua Wang,Youguo Shi,Kam Tuen Law,Stefano Sanvito,Peng Zhou,Zheng Han,Faxian Xiu

DOI: https://doi.org/10.1021/acsnano.8b03102

IF: 17.1

2018-01-01

ACS Nano

Abstract:The search for proximity-induced superconductivity in topological materials has generated widespread interest in the condensed matter physics community. The superconducting states inheriting nontrivial topology at interfaces are expected to exhibit exotic phenomena such as topological superconductivity and Majorana zero modes, which hold promise for applications in quantum computation. However, a practical realization of such hybrid structures based on topological semimetals and superconductors has hitherto been limited. Here, we report the strong proximity-induced superconductivity in type-II Weyl semimetal WTe2, in a van der Waals hybrid structure obtained by mechanically transferring NbSe2 onto various thicknesses of WTe2. When the WTe2 thickness (t_(WTe_2 )) reaches 21 nm, the superconducting transition occurs around the critical temperature (T_c) of NbSe2 with a gap amplitude (Δ_p) of 0.38 meV and an unexpected ultra-long proximity length (l_p) up to 7 μm. With the thicker 42nm WTe2 layer, however, the proximity effect yields T_c~1.2 K, Δ_p=0.07 meV and a short l_p of less than 1 μm. Our theoretical calculations, based on the Bogoliubov-de Gennes equations in the clean limit, predict that the induced superconducting gap is a sizable fraction of the NbSe2 superconducting one when t_(WTe_2 ) is less than 30 nm, and then decreases quickly as t_(WTe_2 ) increases. This agrees qualitatively well with the experiments. Such observations demonstrate a new direction in the search for superconducting phases in topological semimetals.
High-entropy Silicide Superconductors with W_5Si_3-type Structure

Bin Liu,Wuzhang Yang,Guorui Xiao,Qinqing Zhu,Shijie Song,Guang-Han Cao,Zhi Ren

DOI: https://doi.org/10.1103/physrevmaterials.7.014805

IF: 3.98

2023-01-01

Physical Review Materials

Abstract:We report the synthesis, crystal structure and physical properties of two new high-entropy silicides (HESs), namely (Nb_0.1Mo_0.3W_0.3Re_0.2Ru_0.1)_5Si_3 and (Nb_0.2Mo_0.3W_0.3Re_0.1Ru_0.1)_5Si_3. Structural analysis indicates that both HESs consist of a (nearly) single tetragonal W_5Si_3-type phase (space group I4/mcm) with a disordered cation distribution. Electrical resistivity, magnetic susceptibility and specific heat measurements show that (Nb_0.1Mo_0.3W_0.3Re_0.2Ru_0.1)_5Si_3 and (Nb_0.2Mo_0.3W_0.3Re_0.1Ru_0.1)_5Si_3 are weakly coupled bulk superconductors, which represent the first superconducting high-entropy nonoxide ceramics. In particular, these HESs have higher T_ c values (3.2-3.3 K) compared with those of the binary counterparts, and their B_ c2(0)/T_ c ratios are the largest among superconductors of the same structural type.
Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Weiyao Zhao,Chi Xuan Trang,Qile Li,Lei Chen,Zengji Yue,Abuduliken Bake,Cheng Tan,Lan Wang,Mitchell Nancarrow,Mark Edmonds,David Cortie,Xiaolin Wang

DOI: https://doi.org/10.1103/physrevb.104.085153

IF: 3.7

2021-08-30

Physical Review B

Abstract:Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high-performance quantum devices. To achieve the better performance of TIs, here, we present a codoping strategy using synergistic rare-earth (RE) Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both a transition-metal-doped TI [high ferromagnetic ordering temperature and observed quantum anomalous Hall effect (QAHE)], and a RE doped TI (large magnetic moments and significant spin-orbit coupling). In the as-grown single crystals, clear evidences of ferromagnetic ordering were observed. The angle-resolve photoemission spectroscopy indicates the ferromagnetism opens a ∼44 meV band gap at the surface Dirac point. Moreover, the mobility of the carriers at 3 K is ∼7400cm2/Vs, and we thus observed an ultra-strong Shubnikov–de Haas oscillation in the longitudinal resistivity, as well as the Hall steps in transverse resistivity <14 T. Our transport and angular-resolved photoemission spectroscopy results suggest that the RE and transition metal codoping in the Bi2Se3 system is a promising avenue to implement the QAHE, as well as harnessing the massive Dirac fermion in electrical devices.

physics, condensed matter, applied,materials science, multidisciplinary
Emerging various electronic and magnetic properties of silicene by light rare-earth metal substituted doping

Wen-Zhong Li,Ming-Yang Liu,Long Gong,Qing-Yuan Chen,Chao Cao,Yao He

DOI: https://doi.org/10.1016/j.spmi.2020.106712

IF: 3.22

2020-12-01

Superlattices and Microstructures

Abstract:Silicene is a single-layer silicon film, and metal atom doping can effectively regulate its physical properties. In this paper, we study the electronic and magnetic properties of light rare-earth (RE) doped silicene based on density functional theory (DFT) calculations. Through the study of three doping concentrations, it is found that light rare-earth (RE) doped silicene can produce large magnetic moment, and their magnetic properties are mainly derived from the f states of rare-earth (RE) atom. Except for Pm- and Sm-doped silicene, the bonding strength of the Si-Si bond of other doping is weakened. Moreover, we also find various electronic properties of light rare-earth (RE) doped silicene, such as half-metallic, metallic, and semiconducting properties, which may provide some new ideas for the application of silicene.

physics, condensed matter
An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Dan Wang,Cui-E Hu,Li-Gang Liu,Min Zhang,Xiang-Rong Chen

DOI: https://doi.org/10.3390/ma15113864

IF: 3.4

2022-05-28

Materials

Abstract:In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi2Se3. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi2Se3 were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi2Se3. Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi2Se3 is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi2Se3 is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
ZrOsSi: A $Z_2$ topological metal with a superconducting ground state

S. K. Ghosh,B. Li,C. Xu,A. D. Hillier,P. K. Biswas,X. Xu,T. Shiroka

DOI: https://doi.org/10.3389/fphy.2023.1256166

2023-10-06

Abstract:The silicide superconductors (Ta, Nb, Zr)OsSi are among the best candidate materials for investigating the interplay of topological order and superconductivity. Here, we investigate in detail the normal-state topological properties of (Ta, Nb, Zr)OsSi, focusing on ZrOsSi, by employing a combination of $^{29}$Si nuclear magnetic resonance (NMR) measurements and first-principles band-structure calculations. We show that, while (Ta, Nb)OsSi behave as almost ideal metals, characterized by weak electronic correlations and a relatively low density of states, the replacement of Ta (or Nb) with Zr expands the crystal lattice and shifts ZrOsSi towards an insulator. Our ab initio calculations indicate that ZrOsSi is a $Z_2$ topological metal with clear surface Dirac cones and properties similar to a doped strong topological insulator.

Superconductivity,Strongly Correlated Electrons
Superconducting dome by tuning through a Van Hove singularity in a two-dimensional metal

Wen Wan,Rishav Harsh,Paul Dreher,Fernando de Juan,Miguel M. Ugeda

DOI: https://doi.org/10.1038/s41699-023-00401-4

2023-06-15

Abstract:Chemical substitution is a promising route for the exploration of a rich variety of doping- and/or disorder-dependent collective phenomena in low-dimensional quantum materials. Here we show that transition metal dichalcogenide alloys are ideal platforms to this purpose. In particular, we demonstrate the emergence of superconductivity in the otherwise metallic single-layer TaSe$_{2}$ by minute electron doping provided by substitutional W atoms. We investigate the temperature- and magnetic field-dependence of the superconducting state of Ta$_{1-\delta}$W$_\delta$Se$_2$ with electron doping ($\delta$) using variable temperature (0.34 K - 4.2 K) scanning tunneling spectroscopy (STS). We unveil the emergence of a superconducting dome spanning 0.003 < $\delta$ < 0.03 with a maximized critical temperature of 0.9 K, a significant increase from that of bulk TaSe$_{2}$ (T$_C$ = 0.14 K). Superconductivity emerges from an increase of the density of states (DOS) as the Fermi surface approaches a van Hove singularity due to doping. Once the singularity is reached, however, the DOS decreases with $\delta$, which gradually weakens the superconducting state, thus shaping the superconducting dome. Lastly, our doping-dependent measurements allow us to unambiguously track the development of a Coulomb glass phase triggered by disorder due to W dopants.

Superconductivity,Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons
Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

C. Q. Han,H. Li,W. J. Chen,Fengfeng Zhu,Meng-Yu Yao,Z. J. Li,M. Wang,Bo F. Gao,D. D. Guan,Canhua Liu,C. L. Gao,Dong Qian,Jin-Feng Jia

DOI: https://doi.org/10.1063/1.4934590

IF: 4

2015-10-26

Applied Physics Letters

Abstract:Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor.

physics, applied
Possible structural origin of superconductivity in Sr-doped Bi2Se3

Zhuojun Li,Meng Wang,Dejiong Zhang,Nan Feng,Wenxiang Jiang,Chaoqun Han,Weijiong Chen,Mao Ye,Chunlei Gao,Jinfeng Jia,Jixue Li,Shan Qiao,Dong Qian,Ben Xu,He Tian,Bo Gao

DOI: https://doi.org/10.48550/arXiv.1803.02947

2018-03-08

Superconductivity

Abstract:Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercalation of dopant atoms may not necessarily make doped Bi2Se3 superconducting. Thus, the structural origin of superconductivity in doped Bi2Se3 remains an open question. Herein, we combined material synthesis and characterization, high-resolution transmission electron microscopy, and first-principles calculations to study the doping structure of Sr-doped Bi2Se3. We found that the emergence of superconductivity is strongly related with n-type dopant atoms. Atomic-level energy-dispersive X-ray mapping revealed various n-type Sr dopants that occupy intercalated and interstitial positions. First-principles calculations showed that the formation energy of a specific interstitial Sr doping position depends strongly on Sr doping level. This site changes from a metastable position at low Sr doping level to a stable position at high Sr doping level. The calculation results explain why quenching is necessary to obtain superconducting samples when the Sr doping level is low and also why slow furnace cooling can yield superconducting samples when the Sr doping level is high. Our findings suggest that Sr atoms doped at interstitial locations, instead of those intercalated in van der Waals gaps, are most likely to be responsible for the emergence of superconductivity in Sr-doped Bi2Se3.
Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

Jian-Min Zhang,Wenguang Zhu,Ying Zhang,Di Xiao,Yugui Yao

DOI: https://doi.org/10.1103/PhysRevLett.109.266405

2013-01-06

Abstract:We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic properties of doped Bi2Se3 are studied using first-principles calculations within density functional theory. Our results show that Bi substitutional sites are energetically more favorable than interstitial sites for single impurities. Detailed electronic structure analysis reveals that Cr and Fe doped materials are still insulating in the bulk but the intrinsic band gap of Bi2Se3 is substantially reduced due to the strong hybridization between the d states of the dopants and the p states of the neighboring Se atoms. The calculated magnetic coupling suggests that Cr doped Bi2Se3 is possible to be both ferromagnetic and insulating, while Fe doped Bi2Se3 tends to be weakly antiferromagnetic.

Materials Science

Strong enhancement of superconductivity in the topological transition metal silicide W<sub>5</sub>Si<sub>3</sub> by Re doping

Strong enhancement of superconductivity in the topological transition metal silicide W5Si3 by Re doping

Doping-Induced Superconductivity in the Topological Semimetal Mo<sub>5</sub>Si<sub>3</sub>

Doping-Induced Superconductivity in the Topological Semimetal Mo 5 Si 3

Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo$_5$Si$_3$

Metal–insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7

Reentrance of Interface Superconductivity in a High-Tc Cuprate Heterostructure

Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re$_{3}$Ge$_{7}$

Enhanced Anisotropic Superconductivity in the Topological Nodal-Line Semimetal InxTaS2

High-entropy silicide superconductors with W$_{5}$Si$_{3}$-type structure

ZrOsSi: a Z2 topological metal with a superconducting ground state

Inducing Strong Superconductivity in WTe 2 by a Proximity Effect.

High-entropy Silicide Superconductors with W_5Si_3-type Structure

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Emerging various electronic and magnetic properties of silicene by light rare-earth metal substituted doping

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

ZrOsSi: A $Z_2$ topological metal with a superconducting ground state

Superconducting dome by tuning through a Van Hove singularity in a two-dimensional metal

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Possible structural origin of superconductivity in Sr-doped Bi2Se3

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3