A Mechanistic Study of Oxygen Replenishment of ReducedPerovskites in Chemical Looping Redox Reactions

Hui Chang,Gong Cheng,Ka-Ke Zhu,Zhi-Jun Sui,De Chen,Xing-Gui Zhou,Yi-An Zhu
DOI: https://doi.org/10.1021/acs.jpcc.2c00509
2022-01-01
The Journal of Physical Chemistry C
Abstract:Understanding the replenishment process ofreduced perovskites is of great importance for rational design ofnew oxygen carriers for chemical looping redox reactions. In thiswork, DFT + U calculations have been performed to probe the O2dissociation and oxygen/vacancy migration mechanisms on threerepresentative defective and pristine LaBO3(B = Cr, Mn, and Fe)surfaces. It is found that on all the three defective surfaces withrelatively high vacancy concentrations, the O2molecule ispreferentially adsorbed at the vacancy site. On the oxygen-deficientsurfaces with a vacancy coverage of above 1/4 ML, the healing ofadjacent oxygen vacancies takes place. At the vacancy coverage of1/4 ML, the replenishment of the reduced surfaces by thedissociated O ad-atoms is achieved by a long-range in-layer O(surface vacancy) migration mechanism with the O ad-atom kept still rather than through an out-of-layer O ad-atom hoppingpathway where the vacancy is kept still. As the vacancy concentration becomes even lower, the oxygen vacancy can be healed directlyby the adsorption of O2. On the defect-free surfaces, the dominant pathway for the O ad-atom hopping process is also identified bykinetic Monte Carlo simulations. Linear scaling relations arefinally established to show that the oxygen vacancy formation energycan be used as a descriptor to measure the ease with which the O ad-atom migrates on the perovskite surfaces and to guide theinvestigation toward better oxygen carriers
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