Proposal for Low-Power Atom Trapping on a GaN-on-sapphire Chip

Aiping Liu,Lei Xu,Xin-Biao Xu,Guang-Jie Chen,Pengfei Zhang,Guo-Yong Xiang,Guang-Can Guo,Qin Wang,Chang-Ling Zou
DOI: https://doi.org/10.1103/physreva.106.033104
2022-01-01
Abstract:Hybrid photon-atom integrated circuits, which include photonic microcavities and trapped single neutral atoms in their evanescent field, have great potential for quantum information processing. In this platform, the atoms provide single-photon nonlinearity and long-lived memory, which are complementary to the excellent passive photonic devices in conventional quantum photonic circuits. In this work, we propose a stable platform for realizing hybrid photon-atom circuits based on an unsuspended photonic chip. By introducing high-order modes in the microring, a feasible evanescent-field trap potential well similar to 0.26 mK could be obtained by only 10-mW-level power in the cavity, compared with the 100-mW-level power required in the scheme based on fundamental modes. Based on our scheme, stable single-atom trapping with relatively low laser power is feasible for future studies on high-fidelity quantum gates, single-photon sources, and many-body quantum physics based on a controllable atom array in a microcavity.
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