Surface activation and brazing of SiC ceramic by ion bombardment

Z. B. Chen,X. G. Song,M. Dan,Y. Luo,B. Han

DOI: https://doi.org/10.1016/j.msea.2021.142333

2022-01-01

Abstract:Surface microstructural modification of SiC ceramic is induced by ion bombardment under different bias voltage, and the effect on related evolution of interfacial microstructure and shear property of brazed joints are studied in detail. Increasing the bias voltage from 30 keV to 60 keV, the thickness of the amorphous layer in the SiC surface increases from 80.8 nm to 130 nm, as well as for the amorphization degree. Moreover, dislocation generation, twin formation and complete amorphization transformation evolution processes occur below the amorphous layer. The surface roughness of SiC decreases while surface energy increases 14.9%. Obvious stratification is gradually disappeared and a TiC + Ti5Si3 mixed reaction layer is formed in SiC brazed joints when bias voltage reaches 40 keV. The thickness of the interfacial reaction layer decreases firstly and then increases slightly, while the shear strength of the brazed joints follows the opposite trend. The interfacial reaction layer and shear property of brazed joints can be regulated by optimizing ion bombardment parameters.