Abstract:Compared to 9xxnm laser diodes emitting at 808nm are more prone to catastrophic optical mirror damage (COMD) and thermal rollover due to the shorter wavelength, resulting in lower device power. In this letter, we optimize a structure based on InGaAsP/InGaP to improve the conversion efficiency and use facet passivation to improve the COMD level. Laser diodes with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100~\mu \text{m}$ </tex-math></inline-formula> emitter width and 5mm cavity length are fabricated. The continuous wave (CW) output power reaches 19W at 20A without COMD, which is the maximum CW state of art power reported so far for 808nm laser diodes. The slope efficiency reaches 1.28W/A and the maximum electro-optic conversion efficiency is 59.1%. The internal loss and internal quantum efficiency of the devices are 0.61cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> and 98%, and the characteristic temperature <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T_{0}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T_{1}$ </tex-math></inline-formula> at high temperatures are 165K and 637K. The device can reliably work at 10A under 35° heatsinks temperatures for over 2000h.

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